TL F 6349
54LS10DM54LS10DM74LS10
Triple
3-Input
NAND
Gates
June 1989
54LS10 DM54LS10 DM74LS10
Triple 3-Input NAND Gates
General Description
This device contains three independent gates each of which
performs the logic NAND function
Features
Y
Alternate Military Aerospace device (54LS10) is avail-
able Contact a National Semiconductor Sales Office
Distributor for specifications
Connection Diagram
Dual-In-Line Package
TL F 6349 1
Order Number 54LS10DMQB 54LS10FMQB 54LS10LMQB
DM54LS10J DM54LS10W DM74LS10M or DM74LS10N
See NS Package Number E20A J14A M14A N14A or W14B
Function Table
Y
e
ABC
Inputs
Output
A
B
C
Y
X
X
L
H
X
L
X
H
L
X
X
H
H
H
H
L
H
e
High Logic Level
L
e
Low Logic Level
X
e
Either Low or High Logic Level
C1995 National Semiconductor Corporation
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings
(Note)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
7V
Input Voltage
7V
Operating Free Air Temperature Range
DM54LS and 54LS
b
55 C to
a
125 C
DM74LS
0 C to
a
70 C
Storage Temperature Range
b
65 C to
a
150 C
Note
The ``Absolute Maximum Ratings'' are those values
beyond which the safety of the device cannot be guaran-
teed The device should not be operated at these limits The
parametric values defined in the ``Electrical Characteristics''
table are not guaranteed at the absolute maximum ratings
The ``Recommended Operating Conditions'' table will define
the conditions for actual device operation
Recommended Operating Conditions
Symbol
Parameter
DM54LS10
DM74LS10
Units
Min
Nom
Max
Min
Nom
Max
V
CC
Supply Voltage
4 5
5
5 5
4 75
5
5 25
V
V
IH
High Level Input Voltage
2
2
V
V
IL
Low Level Input Voltage
0 7
0 8
V
I
OH
High Level Output Current
b
0 4
b
0 4
mA
I
OL
Low Level Output Current
4
8
mA
T
A
Free Air Operating Temperature
b
55
125
0
70
C
Electrical Characteristics
over recommended operating free air temperature range (unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 1)
V
I
Input Clamp Voltage
V
CC
e
Min I
I
e b
18 mA
b
1 5
V
V
OH
High Level Output
V
CC
e
Min I
OH
e
Max
DM54
2 5
3 4
V
Voltage
V
IL
e
Max
DM74
2 7
3 4
V
OL
Low Level Output
V
CC
e
Min I
OL
e
Max
DM54
0 25
0 4
Voltage
V
IH
e
Min
DM74
0 35
0 5
V
I
OL
e
4 mA V
CC
e
Min
DM74
0 25
0 4
I
I
Input Current
Max
V
CC
e
Max V
I
e
7V
0 1
mA
Input Voltage
I
IH
High Level Input Current
V
CC
e
Max V
I
e
2 7V
20
m
A
I
IL
Low Level Input Current
V
CC
e
Max V
I
e
0 4V
b
0 36
mA
I
OS
Short Circuit
V
CC
e
Max
DM54
b
20
b
100
mA
Output Current
(Note 2)
DM74
b
20
b
100
I
CCH
Supply Current with
V
CC
e
Max
0 6
1 2
mA
Outputs High
I
CCL
Supply Current with
V
CC
e
Max
1 8
3 3
mA
Outputs Low
Switching Characteristics
at V
CC
e
5V and T
A
e
25 C (See Section 1 for Test Waveforms and Output Load)
R
L
e
2 kX
Symbol
Parameter
C
L
e
15 pF
C
L
e
50 pF
Units
Min
Max
Min
Max
t
PLH
Propagation Delay Time
3
10
4
15
ns
Low to High Level Output
t
PHL
Propagation Delay Time
3
10
4
15
ns
High to Low Level Output
Note 1
All typicals are at V
CC
e
5V T
A
e
25 C
Note 2
Not more than one output should be shorted at a time and the duration should not exceed one second
2
Physical Dimensions
inches (millimeters)
Ceramic Leadless Chip Carrier Package (E)
Order Number 54LS10LMQB
NS Package Number E20A
14-Lead Ceramic Dual-In-Line Package (J)
Order Number 54LS10DMQB or DM54LS10J
NS Package Number J14A
4
Physical Dimensions
inches (millimeters) (Continued)
14-Lead Small Outline Molded Package (M)
Order Number DM74LS10M
NS Package Number M14A
14-Lead Molded Dual-In-Line Package (N)
Order Number DM74LS10N
NS Package Number N14A
5
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