TL F 7560
DS75365
Quad
TTL-to-MOS
Driver
June 1992
DS75365 Quad TTL-to-MOS Driver
General Description
The DS75365 is a quad monolithic integrated TTL-to-MOS
driver and interface circuit that accepts standard TTL input
signals and provides high-current and high-voltage output
levels suitable for driving MOS circuits It is used to drive
address control and timing inputs for several types of MOS
RAMs including the 1103
The DS75365 operates from the TTL 5V supply and the
MOS V
SS
and V
BB
supplies in many applications This de-
vice has been optimized for operation with V
CC2
supply volt-
age from 16V to 20V and with nominal V
CC3
supply voltage
from 3V to 4V higher than V
CC2
However it is designed so
as to be usable over a much wider range of V
CC2
and V
CC3
In some applications the V
CC3
power supply can be elimi-
nated by connecting the V
CC3
to the V
CC2
pin
Features
Y
Quad positive-logic NAND TTL-to-MOS driver
Y
Versatile interface circuit for use between TTL and
high-current high-voltage systems
Y
Capable of driving high-capacitance loads
Y
Compatible with many popular MOS RAMs
Y
Interchangeable with Intel 3207
Y
V
CC2
supply voltage variable over side range to 24V
maximum
Y
V
CC3
supply voltage pin available
Y
V
CC3
pin can be connected to V
CC2
pin in some
applications
Y
TTL compatible diode-clamped inputs
Y
Operates from standard bipolar and MOS supply
voltages
Y
Two common enable inputs per gate-pair
Y
High-speed switching
Y
Transient overdrive minimizes power dissipation
Y
Low standby power dissipation
Schematic and Connection Diagrams
TL F 7560 1
Dual-In-Line Package
TL F 7560 2
Top View
Positive Logic Y
e
A
E1
E2
Order Number DS75365N or DS75365WM
See NS Package Number M16B or N16A
C1995 National Semiconductor Corporation
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings
(Note 1)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage Range of V
CC1
b
0 5V to 7V
Supply Voltage Range of V
CC2
b
0 5V to 25V
Supply Voltage Range of V
CC3
b
0 5V to 30V
nput Voltage
5 5V
Inter-Input Voltage (Note 4)
5 5V
Storage Temperature Range
b
65 C to
a
150 C
Maximum Power Dissipation at 25 C
Cavity Package
1509 mW
Molded Package
1476 mW
SO Package
1488 mW
Lead Temperature (Soldering 10 sec)
300 C
Derate cavity package 10 1 mW C above 25 C derate molded package
11 8 mW C above 25 C derate SO package 11 9 mW C above 25 C
Operating Conditions
Min
Max
Units
Supply Voltage (V
CC1
)
4 75
5 25
V
Supply Voltage (V
CC2
)
4 75
24
V
Supply Voltage (V
CC3
)
V
CC2
28
V
Voltage Difference Between
0
10
V
Supply Voltages V
CC3
V
CC2
Operating Ambient Temperature
0
70
C
Range (T
A
)
Electrical Characteristics
(Notes 2 and 3)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IH
High-Level Input Voltage
2
V
V
IL
Low-Level Input Voltage
0 8
V
V
I
Input Clamp Voltage
I
I
e b
12 mA
b
1 5
V
V
OH
High-Level Output Voltage V
CC3
e
V
CC2
a
3V V
IL
e
0 8V I
OH
e b
100 mA V
CC2
b
0 3 V
CC2
b
0 1
V
V
CC3
e
V
CC2
a
3V V
IL
e
0 8V I
OH
e b
10 mA
V
CC2
b
1 2 V
CC2
b
0 9
V
V
CC3
e
V
CC2
V
IL
e
0 8V I
OH
e b
50 mA
V
CC2
b
1 V
CC2
b
0 7
V
V
CC3
e
V
CC2
V
IL
e
0 8V I
OH
e b
10 mA
V
CC2
b
2 3 V
CC2
b
1 8
V
V
OL
Low-Level Output Voltage V
IH
e
2V I
OL
e
10 mA
0 15
0 3
V
V
CC3
e
15V to 28V V
IH
e
2V I
OL
e
40 mA
0 25
0 5
V
V
O
Output Clamp Voltage
V
I
e
0V I
OH
e
20 mA
V
CC2
a
1 5
V
I
I
Input Current at Maximum V
I
e
5 5V
1
mA
Input Voltage
I
IH
High-Level Input Current
V
I
e
2 4V
A Inputs
40
m
A
E1 and E2 Inputs
80
m
A
I
IL
Low-Level Input Current
V
I
e
0 4V
A Inputs
b
1
b
1 6
mA
E1 and E2 Inputs
b
2
b
3 2
mA
I
CC1(H)
Supply Current from V
CC1
V
CC1
e
5 25V V
CC2
e
24V
4
8
mA
All Outputs High
V
CC3
e
28V All Inputs at 0V No Load
I
CC2(H)
Supply Current from V
CC2
b
2 2
a
0 25
mA
All Outputs High
b
2 2
b
3 2
mA
I
CC3(H)
Supply Current from V
CC3
2 2
3 5
mA
All Outputs High
I
CC1(L)
Supply Current from V
CC1
V
CC1
e
5 25V V
CC2
e
24V
31
47
mA
All Outputs Low
V
CC3
e
28V All Inputs at 5V No Load
I
CC2(L)
Supply Current from V
CC2
3
mA
All Outputs Low
I
CC3(L)
Supply Current from V
CC3
16
25
mA
All Outputs Low
I
CC2(H)
Supply Current from V
CC2
V
CC1
e
5 25V V
CC2
e
24V
0 25
mA
All Outputs High
V
CC3
e
24V All Inputs at 0V No Load
I
CC3(H)
Supply Current from V
CC3
0 5
mA
All Outputs High
2
Electrical Characteristics
(Notes 2 3) (Continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
CC2(S)
Supply Current from V
CC2
V
CC1
e
0V V
CC2
e
24V
0 25
mA
Stand-By Condition
V
CC3
e
24V All Inputs at 5V No Load
I
CC3(S)
Supply Current from V
CC3
0 5
mA
Stand-By Condition
Note 1
``Absolute Maximum Ratings'' are those values beyond which the safety of the device cannot be guaranteed Except for ``Operating Temperature Range''
they are not meant to imply that the devices should be operated at these limits The table of ``Electrical Characteristics'' provides conditions for actual device
operation
Note 2
Unless otherwise specified min max limits apply across the 0 C to
a
70 C range for the DS75365 All typical values are for T
A
e
25 C and V
CC1
e
5V and
V
CC2
e
20V and V
CC3
e
24V
Note 3
All currents into device pins shown as positive out of device pins as negative all voltages referenced to ground unless otherwise noted All values shown
as max or min on absolute value basis
Note 4
This rating applies between any two inputs of any one of the gates
Switching Characteristics
V
CC1
e
5V V
CC2
e
20V V
CC3
e
24V T
A
e
25 C
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
DLH
Delay Time Low-to-High Level Output
C
L
e
200 pF
11
20
ns
t
DHL
Delay Time High-to-Low Level Output
R
D
e
24X
10
18
ns
t
TLH
Transition Time Low-to-High Level Output
(
Figure 1 )
20
33
ns
t
THL
Transition Time High-to-Low Level Output
20
33
ns
t
PLH
Propagation Delay Time Low-to-High Level Output
10
31
48
ns
t
PHL
Propagation Delay Time High-to-Low Level Output
10
30
46
ns
AC Test Circuit and Switching Time Waveforms
TL F 7560 3
TL F 7560 4
Note 1
The pulse generator has the following characteristics PRR
e
1 MHz Z
OUT
e
58X
Note 2
C
L
includes probe and jig capacitance
FIGURE 1 Switching Times Each Driver
3
Typical Performance Characteristics
Output Current
High-Level Output Voltage vs
Output Current
High-Level Output Voltage vs
Output Current
Low-Level Output Voltage
TL F 7560 5
Characteristics
Voltage Transfer
Drivers) vs Frequency
Total Dissipation (All Four
vs Ambient Temperature
Low-to-High Level Output
Propagation Delay Time
High-to-Low Level Output
vs Ambient Temperature
Propagation Delay Time
V
CC2
Supply Voltage
Low-to-High Level Output vs
Propagation Delay Time
vs V
CC2
Supply Voltage
High-to-Low Level Output
Propagation Delay Time
Load Capacitance
Low-to-High Level Output vs
Propagation Delay Time
Load Capacitance
High-to-Low Level Output vs
Propagation Delay Time
TL F 7560 6
4
TL F 7560 7
FIGURE 2 Interconnection of DS75365 Devices
with 1103-Type Silicon-Gate MOS RAM
Typical Applications
The fast switching speeds of this device may produce unde-
sirable output transient overshoot because of load or wiring
inductance A small series damping resistor may be used to
reduce or eliminate this output transient overshoot The op-
timum value of the damping resistor depends on the specific
load characteristics and switching speed A typical value
would be between 10X and 30X (
Figure 3 )
Note R
D
j
10X to 30X (Optional)
TL F 7560 8
FIGURE 3 Use of Damping Resistor to Reduce or
Eliminate Output Transient Overshoot in Certain
DS75365 Applications
Thermal Information
POWER DISSIPATION PRECAUTIONS
Significant power may be dissipated in the DS75365 driver
when charging and discharging high-capacitance loads over
a wide voltage range at high frequencies The total dissipa-
tion curve shows the power dissipated in a typical DS75365
as a function of load capacitance and frequency Average
power dissipation by this driver can be broken into three
components
P
T(AV)
e
P
DC(AV)
a
P
C(AV)
a
P
S(AV)
where P
DC(AV)
is the steady-state power dissipation with the
output high or low P
C(AV)
is the power level during charging
or discharging of the load capacitance and P
S(AV)
is the
power dissipation during switching between the low and
high levels None of these include energy transferred to the
load and all are averaged over a full cycle
The power components per driver channel are
P
DC(AV)
e
P
L
t
L
a
P
H
t
H
T
P
C(AV) j C VC
2
f
P
S(AV)
e
P
LH
t
LH
a
P
HL
t
HL
T
where the times are as defined in
Figure 4
P
L
P
H
P
LH
and P
HL
are the respective instantaneous lev-
els of power dissipation and C is load capacitance
The DS75365 is so designed that P
S
is a negligible portion
of P
T
in most applications Except at very high frequencies
t
L
a
t
H
n
t
LH
a
t
HL
so that P
S
can be neglected The total
dissipation curve for no load demonstrates this point The
power dissipation contributions from all four channels are
then added together to obtain total device power
The following example illustrates this power calculation
technique Assume all four channels are operating identical-
ly with C
e
100 pF f
e
2 MHz V
CC1
e
5V V
CC2
e
20V
V
CC3
e
24V and duty cycle
e
60% outputs high
(t
H
T
e
0 6) Also assume V
OH
e
20V V
OL
e
0 1V P
S
is
negligible and that the current from V
CC2
is negligible when
the output is low
On a per-channel basis using data sheet values
P
DC(AV)
e
(5V)
4 mA
4
J
a
(20V)
b
2 2 mA
4
J
a
(24V)
2 2 mA
4
J(
(0 6)
a
(5V)
31 mA
4
J
a
(20V)
0 mA
4
J
a
(24V)
16 mA
4
J(
(0 4)
P
DC(AV)
e
58 mW per channel
P
C(AV)
j
(100 pF) (19 9V)
2
(2 MHz)
P
C(AV)
j
79 mW per channel
For the total device dissipation of the four channels
P
T(AV)
j
4 (58
a
79)
P
T(AV)
j
548 mW typical for total package
TL F 7560 9
FIGURE 4 Output Voltage Waveform
5
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