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Электронный компонент: DS90CR217MTD

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DS90CR217/DS90CR218
+3.3V Rising Edge Data Strobe LVDS 21-Bit Channel
Link - 75 MHz
General Description
The DS90CR217 transmitter converts 21 bits of CMOS/TTL
data into three LVDS (Low Voltage Differential Signaling)
data streams. A phase-locked transmit clock is transmitted in
parallel with the data streams over a fourth LVDS link. Every
cycle of the transmit clock 21 bits of input data are sampled
and transmitted. The DS90CR218 receiver converts the
three LVDS data streams back into 21 bits of CMOS/TTL
data. At a transmit clock frequency of 75 MHz, 21 bits of TTL
data are transmitted at a rate of 525 Mbps per LVDS data
channel. Using a 75 MHz clock, the data throughput is 1.575
Gbit/s (197 Mbytes/sec).
This chipset is an ideal means to solve EMI and cable size
problems associated with wide, high speed TTL interfaces.
Features
n
20 to 75 MHz shift clock support
n
50% duty cycle on receiver output clock
n
BestinClass Set & Hold Times on TxINPUTs and
RxOUTPUTs
n
Low power consumption
n
Tx + Rx Power-down mode
<
400W (max)
n
1V common mode range (around +1.2V)
n
Narrow bus reduces cable size and cost
n
Up to 1.575 Gbps throughput
n
Up to 197 Megabytes/sec bandwidth
n
345 mV (typ) swing LVDS devices for low EMI
n
PLL requires no external components
n
Rising edge data strobe
n
Compatible with TIA/EIA-644 LVDS standard
n
Low profile 48-lead TSSOP package
Block Diagrams
TRI-STATE
is a registered trademark of National Semiconductor Corporation.
DS90CR217
DS100871-1
Order Number DS90CR217MTD
See NS Package Number MTD48
DS90CR218
DS100871-27
Order Number DS90CR218MTD
See NS Package Number MTD48
November 1999
DS90CR217/DS90CR218
+3.3V
Rising
Edge
Data
Strobe
L
VDS
21-Bit
Channel
Link-75
MHz
1999 National Semiconductor Corporation
DS100871
www.national.com
Pin Diagrams
Typical Application
DS100871-21
DS90CR217
DS100871-22
DS90CR218
DS100871-23
DS90CR217/DS90CR218
www.national.com
2
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
-0.3V to +4V
CMOS/TTL Input Voltage
-0.5V to (V
CC
+ 0.3V)
CMOS/TTL Output Voltage
-0.3V to (V
CC
+ 0.3V)
LVDS Receiver Input Voltage
-0.3V to (V
CC
+ 0.3V)
LVDS Driver Output Voltage
-0.3V to (V
CC
+ 0.3V)
LVDS Output Short
Circuit Duration
Continuous
Junction Temperature
+150C
Storage Temperature Range
-65C to +150C
Lead Temperature
(Soldering, 4 sec.)
+260C
Maximum Package Power Dissipation
@
+25C
MTD48 (TSSOP) Package:
DS90CR217
1.98 W
DS90CR218
1.89 W
Package Derating
DS90CR217
16 mW/C above +25C
DS90CR218
15 mW/C above +25C
ESD Rating
(HBM, 1.5k
, 100pF)
>
7kV
(EIAJ, 0
, 200pF)
>
700V
Latch Up Tolerance
@
25C
>
300mA
Recommended Operating
Conditions
Min
Nom
Max
Units
Supply Voltage (V
CC
)
3.0
3.3
3.6
V
Operating Free Air
Temperature (T
A
)
-10
+25
+70
C
Receiver Input Range
0
2.4
V
Supply Noise Voltage (V
CC
)
100
mV
PP
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
CMOS/TTL DC SPECIFICATIONS
V
IH
High Level Input Voltage
2.0
V
CC
V
V
IL
Low Level Input Voltage
GND
0.8
V
V
OH
High Level Output Voltage
I
OH
= -0.4 mA
2.7
3.3
V
V
OL
Low Level Output Voltage
I
OL
= 2 mA
0.06
0.3
V
V
CL
Input Clamp Voltage
I
CL
= -18 mA
-0.79
-1.5
V
I
IN
Input Current
V
IN
= 0.4V, 2.5V or V
CC
+1.8
+10
A
V
IN
= GND
-10
0
A
I
OS
Output Short Circuit Current
V
OUT
= 0V
-60
-120
mA
LVDS DRIVER DC SPECIFICATIONS
V
OD
Differential Output Voltage
R
L
= 100
250
290
450
mV
V
OD
Change in V
OD
between
Complimentary Output States
35
mV
V
OS
Offset Voltage (Note 4)
1.125
1.25
1.375
V
V
OS
Change in V
OS
between
Complimentary Output States
35
mV
I
OS
Output Short Circuit Current
V
OUT
= 0V,
-3.5
-5
mA
R
L
= 100
I
OZ
Output TRI-STATE
Current
PWR DWN = 0V,
1
10
A
V
OUT
= 0V or V
CC
LVDS RECEIVER DC SPECIFICATIONS
V
TH
Differential Input High Threshold
V
CM
= +1.2V
+100
mV
V
TL
Differential Input Low Threshold
-100
mV
I
IN
Input Current
V
IN
= +2.4V, V
CC
= 3.6V
10
A
V
IN
= 0V, V
CC
= 3.6V
10
A
TRANSMITTER SUPPLY CURRENT
I
CCTW
Transmitter Supply Current
Worst Case (with Loads)
R
L
= 100
,
C
L
= 5 pF,
Worst Case
Pattern
(
Figures 1, 2)
f = 33 MHz
28
42
mA
f = 40 MHz
29
47
mA
f = 66 MHz
34
52
mA
f = 75 MHz
39
57
mA
DS90CR217/DS90CR218
www.national.com
3
Electrical Characteristics
(Continued)
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
TRANSMITTER SUPPLY CURRENT
I
CCTZ
Transmitter Supply Current
Power Down
PWR DWN = Low
Driver Outputs in TRI-STATE
under Powerdown Mode
10
55
A
RECEIVER SUPPLY CURRENT
I
CCRW
Receiver Supply Current Worst
Case
C
L
= 8 pF,
Worst Case
Pattern
(
Figures 1, 3)
f = 33 MHz
49
60
mA
f = 40 MHz
53
65
mA
f = 66 MHz
78
95
mA
f = 75 MHz
90
105
mA
I
CCRZ
Receiver Supply Current Power
Down
PWR DWN = Low
Receiver Outputs Stay Low during
Powerdown Mode
15
55
A
Note 1: "Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The tables of "Electrical Characteristics" specify conditions for device operation.
Note 2: Typical values are given for V
CC
= 3.3V and T
A
= +25C.
Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise speci-
fied (except V
OD
and
V
OD
).
Note 4: V
OS
previously referred as V
CM
.
Transmitter Switching Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol
Parameter
Min
Typ
Max
Units
LLHT
LVDS Low-to-High Transition Time (
Figure 2)
0.75
1.5
ns
LHLT
LVDS High-to-Low Transition Time (
Figure 2)
0.75
1.5
ns
TCIT
TxCLK IN Transition Time (
Figure 4)
1.0
6.0
ns
TPPos0
Transmitter Output Pulse Position for Bit0 (
Figure 15)
f = 75 MHz
-0.20
0
0.20
ns
TPPos1
Transmitter Output Pulse Position for Bit1
1.71
1.91
2.11
ns
TPPos2
Transmitter Output Pulse Position for Bit2
3.61
3.81
4.01
ns
TPPos3
Transmitter Output Pulse Position for Bit3
5.51
5.71
5.91
ns
TPPos4
Transmitter Output Pulse Position for Bit4
7.42
7.62
7.82
ns
TPPos5
Transmitter Output Pulse Position for Bit5
9.32
9.52
9.72
ns
TPPos6
Transmitter Output Pulse Position for Bit6
11.23
11.43
11.63
ns
TCIP
TxCLK IN Period (
Figure 6)
13.33
T
50
ns
TCIH
TxCLK IN High Time (
Figure 6)
0.35T
0.5T
0.65T
ns
TCIL
TxCLK IN Low Time (
Figure 6)
0.35T
0.5T
0.65T
ns
TSTC
TxIN Setup to TxCLK IN (
Figure 6)
f = 75 MHz
2.5
ns
THTC
TxIN Hold to TxCLK IN (
Figure 6)
0
ns
TCCD
TxCLK IN to TxCLK OUT Delay
@
25C,V
CC
=3.3V (
Figure 8)
3.8
6.3
ns
TPLLS
Transmitter Phase Lock Loop Set (
Figure 10)
10
ms
TPDD
Transmitter Powerdown Delay (
Figure 13)
100
ns
DS90CR217/DS90CR218
www.national.com
4
Receiver Switching Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol
Parameter
Min
Typ
Max
Units
CLHT
CMOS/TTL Low-to-High Transition Time (
Figure 3)
2.0
3.5
ns
CHLT
CMOS/TTL High-to-Low Transition Time (
Figure 3)
1.8
3.5
ns
RSPos0
Receiver Input Strobe Position for Bit 0 (
Figure 16)
f = 75 MHz
0.58
0.95
1.32
ns
RSPos1
Receiver Input Strobe Position for Bit 1
2.49
2.86
3.23
ns
RSPos2
Receiver Input Strobe Position for Bit 2
4.39
4.76
5.13
ns
RSPos3
Receiver Input Strobe Position for Bit 3
6.30
6.67
7.04
ns
RSPos4
Receiver Input Strobe Position for Bit 4
8.20
8.57
8.94
ns
RSPos5
Receiver Input Strobe Position for Bit 5
10.11
10.48
10.85
ns
RSPos6
Receiver Input Strobe Position for Bit 6
12.01
12.38
12.75
ns
RSKM
RxIN Skew Margin (Note 5) (
Figure 17)
f = 75 MHz
380
ps
RCOP
RxCLK OUT Period (
Figure 7)
13.33
T
50
ns
RCOH
RxCLK OUT High Time (
Figure 7)
f = 75 MHz
3.6
5
6.0
ns
RCOL
RxCLK OUT Low Time (
Figure 7)
3.6
5
6.0
ns
RSRC
RxOUT Setup to RxCLK OUT (
Figure 7)
3.5
ns
RHRC
RxOUT Hold to RxCLK OUT (
Figure 7)
3.5
ns
RCCD
RxCLK IN to RxCLK OUT Delay
@
25C, V
CC
= 3.3V (Note 6)(
Figure 9)
3.4
5.0
7.3
ns
RPLLS
Receiver Phase Lock Loop Set (
Figure 11)
10
ms
RPDD
Receiver Powerdown Delay (
Figure 14)
1
s
Note 5: Receiver Skew Margin is defined as the valid data sampling region at the receiver inputs. This margin takes into account the transmitter pulse positions (min
and max) and the receiver input setup and hold time (internal data sampling window). This margin allows LVDS interconnect skew, inter-symbol interference (both
dependent on type/length of cable), and source clock jitter less than 250 ps.
Note 6: Total latency for the channel link chipset is a function of clock period and gate delays through the transmitter (TCCD) and receiver (RCCD). The total latency
for the 217/287 transmitter and 218/288 receiver is: (T + TCCD) + (2
*
T + RCCD), where T = Clock period.
AC Timing Diagrams
DS100871-2
FIGURE 1. "Worst Case" Test Pattern
DS100871-3
DS100871-4
FIGURE 2. DS90CR217 (Transmitter) LVDS Output Load and Transition Times
DS90CR217/DS90CR218
www.national.com
5