NTE100 (PNP) & NTE101 (NPN)
Germanium Complementary Transistors
Oscillator, Mixer for AM Radio,
Medium Speed Switch
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (Note 1), V
CEO
NTE100
24V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
NTE100
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
NTE100
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101
300mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current (NTE100 Only), I
E
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation, P
D
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2.5mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Collector Junction Temperature, T
J
+85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Punchthrough voltage.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Brteakdown Voltage
NTE100
V
(BR)CBO
I
E
= 0
I
C
= 20
A
25
V
NTE101
I
C
= 100
A
25
V
EmitterBase Breakdown Voltage
NTE100
V
(BR)EBO
I
C
= 0
I
E
= 20
A
12
V
NTE101
I
E
= 100
A
25
V
Punch Through Voltage
NTE100
V
PT
V
EBfl
= 1V, Note 2
24
V
NTE101
25
V
Collector Cutoff Current
NTE100
I
CBO
I
E
= 0
V
CB
= 12V
1
5
A
V
CB
= 12V, T
A
= +80
C
40
90
A
NTE101
V
CB
= 25V
3
6
A
Note 2. V
PT
is determined by measuring the EmitterBase floating potential V
EBfl
. The Collector
Base Voltage, V
CB
, is increased until V
EBfl
= 1V; this value of V
CB
= (V
PT
+ 1V). Care must
be taken not to exceed maximum CollectorBase Voltage specified under maximum ratings.
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter Cutoff Current
NTE100
I
EBO
I
C
= 0
V
EB
= 2.5V
1
2.5
A
NTE101
V
EB
= 25V
2
6
A
Static Forward Current Transfer Ratio
NTE100
h
FE
V
CE
= 0.15V, I
C
= 12mA
30
100
V
CE
= 0.20V, I
C
= 24mA
24
110
NTE101
V
CE
= 1V, I
C
= 10mA
20
100
V
CE
= 0.35V, I
C
= 200mA
10
100
BaseEmitter Voltage
NTE100
V
BE
I
B
= 0.4mA, I
C
= 12mA
0.26
0.35
V
I
B
= 1mA, I
C
= 24mA
0.30
0.40
V
NTE101
I
B
= 0.5mA, I
C
= 10mA
0.15
0.22
0.40
V
CollectorEmitter Saturation Voltage
NTE100
V
CE(sat)
I
B
= 0.4mA, I
C
= 12mA
0.08
0.15
V
I
B
= 1mA, I
C
= 24mA
0.08
0.20
V
NTE101
I
B
= 0.5mA, I
C
= 10mA
0.07
0.20
V
SmallSignal Forward Current Transfer Ratio
NTE100
h
fe
V
CE
= 6V I
C
= 1mA, f = 1kHz
135
NTE101
V
CE
= 5V
105
Output Capacitance
NTE100
C
ob
V
CB
= 6V I
E
= 0, f = 1MHz
9
20
pF
NTE101
V
CB
= 5V
14
20
pF
Switching Characteristics
Delay Time
NTE100
t
d
I
C
= 10mA, I
B(1)
= 1.3mA,
0.14
s
NTE101
I
B(2)
= 0.7mA, V
BE(off)
= 0.8V,
R
L
= 1k
0.07
s
Rise Time
t
r
R
L
= 1k
0.20
s
Storage Time
NTE100
t
s
0.38
s
NTE101
0.70
s
Fall Time
NTE100
t
f
0.19
s
NTE101
0.40
s
Stored Base Charge
Q
sb
I
B(1)
= 1mA, I
C
= 10mA
800
1400
pcb
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