NTE102 (PNP) & NTE103 (NPN)
Germanium Complementary Transistors
Power Output, Driver
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me-
diumspeed saturated switching applications.
Features:
D
Low CollectorEmitter Saturation Voltage:
V
CE(sat)
= 200mV Max @ I
C
= 24mA
D
High EmitterBase Breakdown Voltage:
V
(BR)EBO
= 12V Min @ I
E
= 20
A
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CES
24V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
150mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
2mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
4mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, T
stg
65
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 20
A, I
E
= 0
25
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 20
A, I
C
= 0
12
V
PunchThrough Voltage
V
PT
V
EBfl
= 1V, Note 1
24
V
Collector Cutoff Current
I
CBO
V
CB
= 12V, I
E
= 0
0.8
5.0
A
V
CB
= 12V, I
E
= 0, T
A
= +80
C
20
90
A
Emitter Cutoff Current
I
EBO
V
EB
= 2.5V, I
C
= 0
0.5
2.5
A
Note 1. V
PT
is determined by measuring the EmitterBase floating potential V
EBfl
, using a voltmeter
with 11M
minimum input impedance. The CollectorBase Voltage, V
CB
, is increased until
V
EBfl
= 1V; this value of V
CB
= (V
PT
+ 1).
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