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Электронный компонент: NTE107

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NTE107
Silicon NPN Transistor
UHF Oscillator for Tuner
Description:
The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically
for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
25mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C), P
T
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
C
2.67mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (During Soldering, 1/16"
1/32" from case, 10sec), T
L
+260
C
. . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Max Unit
Static Characteristics
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A
30
V
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
CEO
= 3mA, Note 1
12
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A
3
V
Collector Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
0.5
A
Emitter Cutoff Current
I
EBO
V
EB
= 2V, I
C
= 0
0.5
A
Forward Current Transfer Ratio
h
FE
V
CE
= 10V, I
C
= 8mA
20
75
Collector Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
0.6
V
Note 1. Pulse test: Pulse Width = 1
s, Duty Cycle = 1%.
Electrical Characteristics (Cont'd):
(T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Max Unit
Dynamic Characteristics
Current GainBandwidth Product
f
T
I
C
= 5mA, V
CE
= 10V, f = 100MHz
700
2100 MHz
Output Capacitance
C
ob
V
CE
= 10V, I
E
= 0, f = 1MHz
0.8
1.5
pF
Noise Figure
NF
I
C
= 1mA, V
CB
= 6V, f = 60MHz,
R
G
= 400
4.0
6.5
dB
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max