NTE123
Silicon NPN Transistor
General Purpose Audio Amplifier, Switch
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
800mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
800mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
5.33mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
3.0W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
20mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
40
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
75
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
6
V
Collector Cutoff Current
I
CBO
V
CE
= 60V, I
E
= 0
0.01
A
V
CE
= 60V, I
E
= 0, T
A
= +150
C
10
A
I
CEX
V
CE
= 60V, V
EB(off)
= 3V
10
nA
Emitter Cutoff Current
I
EBO
V
EB
= 3V, I
C
= 0
10
nA
Base Cuttoff Current
I
BL
V
CE
= 60V, V
EB(off)
= 3V
20
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 0.1mA, V
CE
= 10V
35
I
C
= 1mA, V
CE
= 10V
50
I
C
= 10mA, V
CE
= 10V
75
I
C
= 10mA, V
CE
= 10V, T
A
= 55
C
35
I
C
= 150mA, V
CE
= 10V
100
300
I
C
= 150mA, V
CE
= 1.0V
50
I
C
= 500mA, V
CE
= 10V
40
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 150mA, I
B
= 15mA
0.3
V
I
C
= 500mA, I
B
= 50mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 150mA, I
B
= 15mA
0.6
1.2
V
I
C
= 500mA, I
B
= 50mA
2.0
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
I
C
= 20mA, V
CE
= 20V,
f = 100MHz, Note 2
300
MHz
Output Capacitance
C
obo
V
CB
= 10V, I
E
= 0, f = 100kHz
8
pF
Input Capacitance
C
ibo
V
EB
= 0.5V, I
C
= 0, f = 100kHz
25
pF
Input Impedance
h
ie
I
C
= 1mA, V
CE
= 10V, f = 1kHz
2.0
8.0
k
I
C
= 10mA, V
CE
= 10V, f = 1kHz
0.25
1.25
k
Voltage Feedback Ratio
h
re
I
C
= 1mA, V
CE
= 10V, f = 1kHz
8
x 10
4
I
C
= 10mA, V
CE
= 10V, f = 1kHz
4
x 10
4
SmallSignal Current Gain
h
fe
I
C
= 1mA, V
CE
= 10V, f = 1kHz
50
300
I
C
= 10mA, V
CE
= 10V, f = 1kHz
75
375
Output Admittance
h
oe
I
C
= 1mA, V
CE
= 10V, f = 1kHz
5.0
35
mhos
I
C
= 10mA, V
CE
= 10V, f = 1kHz
25
200
mhos
CollectorBase Time Constant
rb
C
c
I
E
= 20mA, V
CB
= 20V, f = 31.8MHz
150
ps
Noise Figure
NF
I
C
= 100
A, V
CE
= 10V,
R
S
= 1k
, f = 1kHz
4
dB
Real Part of CommonEmitter
High Frequency Input Impedance
Re(h
ie
)
I
C
= 20mA, V
CE
= 20V, f = 300MHz
60
Switching Characteristics
Delay Time
t
q
V
CC
= 30V, V
BE(off)
= 0.5V,
10
ns
Rise Time
t
r
I
C
= 150mA, I
B1
= 15mA
25
ns
Storage Time
t
s
V
CC
= 30V, I
C
= 150mA,
225
ns
Fall Time
t
f
I
B1
= I
B2
= 15mA
60
ns
Active Region Time Constant
T
A
I
C
= 150mA, V
CE
= 30V
2.5
ns
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Note 2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
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