NTE2313
Silicon NPN Transistor
High Speed Switch
Description:
The NTE2313 is a highvoltage, highspeed, glasspassivated NPN power transistor in a TO220
type package designed for use in converters, inverters, switching regulators, motor control systems,
and switching applications.
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO(sus)
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CES
1000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
0.75A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Base Current, I
BM
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
tot
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
400mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
62.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, L = 25mH
450
V
Collector Cutoff Current
I
CES
V
CS
= 1000V
0.2
mA
V
CS
= 1000V, T
C
= +125
C
1.5
mA
Emitter Cutoff Current
I
EBO
I
C
= 0, V
EB
= 5V
1
mA
Note 2. Pulse Test: Pulse Width = 300
s, Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 2)
DC Current Gain
h
FE
I
C
= 0.1A, V
CE
= 5V
30
50
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 0.3A, I
B
= 30mA
0.8
V
I
C
= 1A, I
B
= 200mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 1A, I
B
= 0.2A
1.1
V
Dynamic Characteristics
CurrentGain Bandwidth Product
f
T
I
C
= 500mA, V
CE
= 10V, f = 1MHz
4
MHz
Switching Characteristics
TurnOn Time
t
on
V
CC
= 250V, I
C
= 1A, I
B1
= 0.2A,
0.3
0.5
s
Storage Time
t
s
I
B2
= 0.4A
2.0
3.5
s
Fall Time
t
f
0.3
s
Note 2. Pulse Test: Pulse Width = 300
s, Duty Cycle
2%.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Base
.100 (2.54)
Collector/Tab
Emitter
.147 (3.75)
Dia Max
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