NTE128 (NPN) & NTE129 (PNP)
Silicon Complementary Transistors
Audio Output, Video, Driver
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack-
age designed primarily for amplifier and switching applications. These devices features high break-
down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current
range.
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
NTE128
140V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
NTE128
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
NTE128
0.8W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
4.6mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129
1.25W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
7.15mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
NTE128
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
28.6mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129
7W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
40mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
NTE128
16.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129
20
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
NTE128
89.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129
140
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 60sec max), T
L
+300
C
. . . . . . . . . . . . . . . . .
Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and
NTE129 (PNP).
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
NTE128
V
(BR)CEO
I
C
= 30mA, I
B
= 0
80
V
NTE129
I
C
= 10mA
80
V
CollectorBase Breakdown Voltage
NTE128
V
(BR)CBO
I
C
= 100
A, I
E
= 0
140
V
NTE129
I
C
= 10
A
80
V
EmitterBase Breakdown Voltage
NTE128
V
(BR)EBO
I
E
= 100
A, I
C
= 0
7
V
NTE129
I
E
= 10
A
5
V
Collector Cutoff Current
NTE128
I
CBO
V
CB
= 90V, I
E
= 0
0.01
A
V
CB
= 90V, I
E
= 0, T
A
= +150
C
10
A
NTE129
V
CB
= 60V
50
nA
V
CB
= 60V, T
A
= +150
C
50
A
Emitter Cutoff Current
NTE128
I
EBO
V
BE
= 5V, I
C
= 0
0.010
A
NTE129
V
BE
= 5V
10
A
ON Characteristics (Note 2)
DC Current Gain
NTE128
h
FE
I
C
= 0.1mA, V
CE
= 10V
50
I
C
= 10mA, V
CE
= 10V
90
I
C
= 150mA, V
CE
= 10V
100
300
I
C
= 150mA, V
CE
= 10V, T
C
= 55
C
40
I
C
= 500mA, V
CE
= 10V
50
I
C
= 1.0A, V
CE
= 10V
15
NTE129
I
C
= 100
A, V
CE
= 5V
75
I
C
= 100mA, V
CE
= 5V
100
300
I
C
= 100mA, V
CE
= 5V, T
C
= 55
C
40
I
C
= 500mA, V
CE
= 5V
70
I
C
= 1.0A, V
CE
= 5V
25
CollectorEmitter Saturation Voltage
NTE128
V
CE(sat)
I
C
= 150mA, I
B
= 15mA
0.2
V
I
C
= 500mA, I
B
= 50mA
0.5
V
NTE129
I
C
= 150mA, I
B
= 15mA
0.15
V
I
C
= 500mA, I
B
= 50mA
0.5
V
BaseEmitter Saturation Voltage
NTE128
V
BE(sat)
I
C
= 150mA, I
B
= 15mA
1.1
V
NTE129
0.9
V
BaseEmitter ON Voltage (NTE129 Only)
V
BE(on)
I
C
= 500mA, V
CE
= 500mV
1.1
V
Note 2. Pulse Test: Pulse Width
300
s, Duty Cycle
1%.
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