NTE13
Silicon NPN Transistor
Low Voltage Output Amp
Features:
D
Low CollectorEmitter Saturation Voltage
D
High DC Current Gain
D
An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by
Taping and Magazine Packaging
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
C
600mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 25V, I
C
= 0
100
nA
CollectorBase Voltage
V
CBO
I
C
= 10
A, I
E
= 0
25
V
CollectorEmitter Voltage
V
CEO
I
C
= 1mA, I
B
= 0
20
V
EmitterBase Voltage
V
EBO
I
E
= 10
A, I
C
= 0
12
V
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 500mA, Note 1
400
800
V
CE
= 2V, I
C
= 1A, Note 1
60
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 20mA
0.13
0.4
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
1.2
V
Transistion Frequency
f
T
V
CB
= 10V, I
E
= 50mA
200
MHz
Collector Capaciatnce
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
10
pF
Note 1. Pulse Test
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