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Электронный компонент: NTE1370

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NTE239
Silicon Controlled Switch (SCS)
Description:
The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for
a numerical indicator tube and switching applications.
Features:
D
Selective Breakover Voltage
D
Low ON Voltage
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
NPN
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (NPN Only, R
BE
= 10k
), V
CER
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (PNP), V
CEO
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
NPN
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
NPN
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Emitter Current (t
p
1ms,
= 0.05), I
EM
NPN
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current (NPN Only), I
C
Continuous
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
250mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
NPN Transistor
Collector Cutoff Current
I
CER
V
CE
= 70V, R
BE
= 10k
10
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
30
1000
nA
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 10mA
50
180
PNP Transistor
Emitter Cutoff Current
I
EBO
V
EB
= 70V, I
C
= 0
0.05
100
nA
DC Current Gain
h
FE
V
CB
= 0, I
E
= 1mA
0.72
2.5
Combined Device
AnodeCathode Voltage
V
AK
I
A
= 50mA, I
C
= 0, R
BE
= 10k
1.05
1.4
V
Holding Current
I
H
R
BE
= 10k
, I
C
= 10mA, V
BB
= 2V
0.1
0.5
1.0
mA
TurnOff Time
t
off
R
BE
= 10k
6
12
s
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
45
1
2
3
4
.190
(4.82)
.500
(12.7)
Min
4
1
2
3
Emitter (PNP)
Collector (PNP)/
Base (NPN)
Emitter (NPN)
Base (PNP)/
Collector (NPN)
Transistor Basing
4
1
2
3
Anode
Cathode/Gate
Cathode
Anode/Gate
Thyristor Basing