NTE218
Silicon PNP Transistor
Audio Power Output
Description:
The NTE218 is ideal for use as a driver, switch and mediumpower amplifier applications. This device
features:
Features:
D
Low Saturation Voltage 0.6V
CE
(sat) @ I
C
= 1A
D
High Gain Characteristics h
FE
@ I
C
= 250mA: 30100
D
Excellent Safe Area Limits
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
2.A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
25W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C 0.143W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
Electrical Characteristics: (T
C
= +25
C unless otherwise sepcified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
ColectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
80
V
Emitter Cutoff Current
I
EBO
V
EB
= 7V
0.5
mA
Collector Cutoff Current
I
CEX
V
CE
= 80V, V
BE(off)
= 1.5V
100
A
V
CE
= 60V, V
BE(off)
= 1.5V, T
C
= +150
C
1.0
mA
I
CEO
V
CE
= 60V, I
B
= 0
1.0
mA
I
CBO
V
CB
= 80V, I
E
= 0
1
100
A
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise sepcified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
V
CE
= 1V, I
C
= 100mA
40
V
CE
= 1V, I
C
= 250mA
30
100
V
CE
= 1V, I
C
= 500mA
20
V
CE
= 1V, I
C
= 1A
10
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1A, I
B
= 125mA
0.6
V
BaseEmitter Voltage
V
BE
V
CE
= 1V, I
C
= 250mA
1.0
V
Transient Characteristics
Current Gain Bandwidth Product
f
T
V
CE
= 1V, I
C
= 250mA, f = 1MHz
3
MHz
Common Base Output Capacitance
C
ob
V
CE
= 10V, I
C
= 0, f = 100kHz
100
pF
SmallSignal Current Gain
h
fe
V
CE
= 10V, I
C
= 50mA, f = 1kHz
25
Note 1 Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Base
.580 (14.7)
.200
(5.08)
Emitter
Collector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
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