NTE10
Silicon NPN Transistor
UHF Low Noise WideBand Amplifier
Features:
D
Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz)
D
High Power Gain: MAG = 14dB Typ (f = 0.9GHz)
D
High Cutoff Frequency: f
T
= 5GHz Typ
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CER
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
70mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
30mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
j
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 12V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EBO
V
EB
= 2V, I
C
= 0
10
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 20mA
40
200
GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 20mA
5.0
GHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
0.8
1.1
pF
Reverse Transfer Capacitance
C
re
V
CB
= 10V, f = 1MHz
0.5
pF
Forward Transfer Gain
|S
21e
|
2
V
CE
= 10V, I
C
= 20mA, f = 0.9GHz
8
10
dB
Maximum Available Power Gain
MAG
V
CE
= 10V, I
C
= 5mA, f = 0.9GHz
14
dB
Noise Figure
NF
V
CE
= 10V, I
C
= 5mA, f = 0.9GHz
2.2
4.5
dB
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