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Электронный компонент: NTE15006

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NTE24 (NPN) & NTE25 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package
designed for general purpose medium power amplifier and switching circuits that require collector cur-
rents to 1A.
Features:
D
High CollectorEmitter Breakdown Voltage: V
CEO
= 80V
D
Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
T
A
= +25
C
850mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J(max)
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
50
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
167
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
80
V
Collector Cutoff Current
I
CBO
V
CB
= 100V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 50mA
40
V
CE
= 2V, I
C
= 250mA
40
V
CE
= 2V, I
C
= 500mA
25
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
0.5
V
I
C
= 1000mA, I
B
= 100mA
1.5
V
BaseEmitter ON Voltage
V
BE(on)
V
CE
= 2V, I
C
= 1000mA
0.5
V
Current Gain Bandwidth Product
f
T
V
CE
= 5V, I
C
= 200mA, f = 100MHz
50
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
30
pF
.100 (2.54)
.200 (5.08)
.180 (4.57)
.018 (0.46)
.015 (0.38)
.050 (1.27)
.050 (1.27)
3.050 (1.27)
.090 (2.28) R
.180
(4.57)
.594
(15.09)
.140
(3.55)
E C B