NTE5640 thru NTE5643
TRIAC, 2.5A
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (Gate Open, T
J
= +100
C, Note 1), V
DROM
NTE5640
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5641
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5642
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5643
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +75
C, Conduction Angle of 360
), I
T(RMS)
2.5A
. . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (One Cycle, at 50Hz or 60Hz), I
TSM
30A
. . . . . . . .
Peak GateTrigger Current (3
s Max), I
GTM
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
I
GTM
for 3
s Max), P
GM
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average GatePower Dissipation, P
G(AV)
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current (For TRIAC Protection, T = 1.25 to 10ms), I
2
t
3A
2
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
4
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
Electrical Characteristics: (At Maximum Ratings and T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak OffState Current
I
DROM
V
DROM
= Max Rating, T
J
= +100
C,
Gate Open, Note 1
0.75
mA
Maximum OnState Voltage
V
TM
i
T
= 5A (Peak), Note 1
2.2
V
DC Holding Current
I
H
Gate Open
15
mA
Critical RateofRise of OffState Voltage
Critical
dv/dt
v
D
= V
DROM
, T
C
= +100
C, Note 1
7
V/
s
DC GateTrigger Current
I
GT
v
D
= 6V, R
L
= 39
, All Quads
25
mA
DC GateTrigger Voltage
V
GT
v
D
= 6V, R
L
= 39
2.2
V
GateControlled TurnOn Time
t
gt
v
D
= V
DROM
, I
GT
= 80mA, t
r
= 0.1
s,
i
T
= 10A (Peak)
2.2
s
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