NTE2588
Silicon NPN Transistor
Horizontal Output for HDTV
Features:
D
High Breakdown Voltage: V
(BR)CEO
= 1200V Min
D
Isolated TO220 Type Package
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
1200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
30mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
8.3
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 1200V, I
E
= 0
1
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1.5A
10
60
Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 1.5A
6
MHz
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 3mA, I
B
= 0.6mA
5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 3mA, I
B
= 0.6mA
2
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
1500
V
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 1mA, R
BE
=
1200
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
5
V
Output Capacitance
C
ob
V
CB
= 100V, f = 1MHz
2.0
pF
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