NTE156
General Purpose Silicon Rectifier
Features:
D
Low Leakage
D
Low Forward Voltage Drop
D
High Current Capability
Maximum Ratings: (T
A
= +25
C unless otherwise specified. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%)
Peak Repetitive Reverse Voltage, V
RRM
1000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Blocking Voltage, V
R
1000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Reverse Voltage, V
R(RMS)
700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Rectified Forward Current. I
O
(.375" (9.5mm) lead length, T
A
= +50
C)
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak Surge Current, I
FSM
(8.3ms single half sinewave superimposed on rated load)
70A
. . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoAnbient, R
thJA
50
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Maximum Instantaneous Forward
Voltage Drop
V
F
I
F
= 2A
1.1
V
Maximum Reverse Current
I
R
V
RRM
= 1000V, T
J
= +25
C
5.0
A
V
RRM
= 1000V, T
J
= +100
C
50
Maximum FullCycle Average Reverse
Current
I
R(AV)
T
L
+75
C, .375 (9.5) leads
30
A
Typical Junction Capacitance
C
j
Note 1
40
pF
Note 1. Measured at 1MHz and applied reverse voltage of 4.0 volts.
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