NTE16002
Silicon NPN Transistor
RF Power Output, P
O
= 13.5W, 175MHz
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
65V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
23W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
131mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
(BR)CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
40
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 0.25mA, I
C
= 0
4
V
Collector Cutoff Current
I
CEO
V
CE
= 30V, I
B
= 0
0.25
mA
I
CEX
V
CE
= 30V, V
BE(off)
= 1.5V,
T
C
= +200
C
10
mA
V
CE
= 65V, V
BE(off)
= 1.5V
5
mA
I
CBO
V
CB
= 65V, I
E
= 0
1
mA
Emitter Cutoff Current
I
EBO
V
BE
= 4V, I
C
= 0
0.25
mA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1A
5
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 100mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 1A, I
B
= 5A
1.5
V
Dynamic Characteristics
Current GainBandwidth Product
f
T
V
CE
= 28V, I
C
= 150mA, f = 100MHz
400
MHz
Output Capacitance
C
ob
V
CB
= 30V, I
E
= 0, f = 100kHz
16
20
pF
Note 1. Pulsed through 25mH inductor.
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Tests
Power Input
P
in
V
CE
= 28V, P
out
= 2.5W, f = 175MHz
0.25
W
CommonEmitter Amplifier Power Gain
G
pe
10
dB
Collector Efficiency
50
%
.340 (8.63)
Dia
Collector
Base
Emitter
.480
(12.19)
Max
.200
(5.08)
Dia
.078
(1.97)
Max
1032 NF2A
.113 (2.88)
.430
(10.92)
.320
(8.22)
Max
.455
(11.58)
Max
.038 (0.98) Dia
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