NTE16006
Silicon NPN Transistor
Low Frequency Output Amp
w
/High Current Gain
Features:
D
High DC Current Gain
D
Low CollectorEmitter Saturation Voltage
D
An M type mold package that allows easy manual and automatic insertion. Can be firmly
mounted flush to PCB surface
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
700mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (Note 1), P
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Copper foil on PCB against Collector: 1.7mm thick, 1cm
2
in area.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
1
A
Emitter CutOff Current
I
CEO
V
CE
= 15V, I
B
= 0
10
A
CollectorBase Voltage
V
CBO
I
C
= 10
A, I
E
= 0
20
V
CollectorEmitter Voltage
V
CEO
I
C
= 1mA, I
B
= 0
20
V
EmitterBase Voltage
V
EBO
I
E
= 10
A, I
C
= 0
15
V
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 150mA, Note 2
1000
2500
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 50mA, Note 2
0.4
V
Transition Frequency
f
T
V
CB
= 20V, I
E
= 20mA, f = 200MHz
55
MHz
Collector Output Capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1MHz
11
15
pF
Note 2. Pulse Measurement
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