NTE236
Silicon NPN Transistor
Final RF Power Output
(P
O
= 16W, 27MHz, SSB)
Description:
The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF
band mobile radio applications.
Features:
D
High Power Gain: G
pe
12dB (V
CC
= 12V, P
O
= 16W, f = 27MHz)
D
Ability to Withstand Infinite VSWR Load when Operated at:
V
CC
= 16V, P
O
= 20W, f = 27MHz
Application:
D
10 to 14 Watt Output Power Class AB Amplifier Applications in HF band
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (R
BE
=
), V
CEO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= 25
C
1.7W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= 25
C
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
73.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
6.25
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 5mA, I
C
= 0
5
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
60
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, R
BE
=
25
V
Collector Cutoff Current
I
CBO
V
CB
= 30V, I
E
= 0
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
100
A
DC Forward Current Gain
h
FE
V
CE
= 12V, I
C
= 10mA, Note 1
10
50
180
Output Power
P
O
V
CC
= 12V, P
in
= 1W, f = 27MHz
16
18
W
Collector Efficiency
h
C
V
CC
= 12V, P
in
= 1W, f = 27MHz
60
70
%
Note 1. Pulse Test: Pulse Width = 150
s, Duty Cycle = 5%.
.126 (3.2)
.347 (9.5)
.122 (3.1)
.177 (4.5)
.100 (2.54)
.019 (0.48)
.142 (3.62) Dia
.051 (1.3)
.358 (9.1)
B
C
E
.485
(12.32)
.485
(12.32)
Min
.395
(9.05)
.189
(4.8)
C
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