NTE5538
Silicon Controlled Rectifier (SCR)
800V
DRM
, 50A
Description:
The NTE5538 general purpose SCR is suited for power supplies up to 400H
Z
on resistive or inductive
loads.
Features:
D
Glass Passivated Chip
D
High Stability and Reliability
D
High Surge Capability
D
High OnState Current
D
Easy Mounting on Heatsink
D
Isolated Package: Insulating Voltage 2500V
RMS
Absolute Maximum Ratings:
Peak Forward Blocking Voltage (T
J
= +125
C), V
DRM
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Blocking Voltage (T
J
= +125
C), V
RRM
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +70
C, Note 1), I
T (RMS)
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average OnState Current (T
C
= +70
C, Note 1), I
T(AV)
32A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Surge Peak OnState Current (T
J
initial = +25
C, Note 2), I
TSM
(t = 8.3ms)
525A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(t = 10ms)
500A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
2
t Value (t = 10ms), I
2
t
1250A
2
sec
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Critical Rate of Rise of OnState Current (Note 3), di/dt
100A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage and Operating Junction Temperature Range, T
stg
, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . .
Thermal Resistance
JunctiontoCase for DC, R
thJC
1
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact (CasetoHeatsink), R
thCH
0.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Single phase circuit, 180
conducting angle.
Note 2. Half sine wave.
Note 3. I
G
= 800mA, di
G
/dt = 1A/
s.
Gate Characteristics: (Maximum Values)
Peak Gate Power (t = 10
s), P
GM
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, P
G (AV)
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current (t = 10
s), I
FGM
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Voltage (t = 10
s), V
FGM
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, V
RGM
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .