ChipFind - документация

Электронный компонент: NTE1667

Скачать:  PDF   ZIP
NTE5538
Silicon Controlled Rectifier (SCR)
800V
DRM
, 50A
Description:
The NTE5538 general purpose SCR is suited for power supplies up to 400H
Z
on resistive or inductive
loads.
Features:
D
Glass Passivated Chip
D
High Stability and Reliability
D
High Surge Capability
D
High OnState Current
D
Easy Mounting on Heatsink
D
Isolated Package: Insulating Voltage 2500V
RMS
Absolute Maximum Ratings:
Peak Forward Blocking Voltage (T
J
= +125
C), V
DRM
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Blocking Voltage (T
J
= +125
C), V
RRM
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +70
C, Note 1), I
T (RMS)
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average OnState Current (T
C
= +70
C, Note 1), I
T(AV)
32A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Surge Peak OnState Current (T
J
initial = +25
C, Note 2), I
TSM
(t = 8.3ms)
525A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(t = 10ms)
500A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
2
t Value (t = 10ms), I
2
t
1250A
2
sec
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Critical Rate of Rise of OnState Current (Note 3), di/dt
100A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage and Operating Junction Temperature Range, T
stg
, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . .
Thermal Resistance
JunctiontoCase for DC, R
thJC
1
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact (CasetoHeatsink), R
thCH
0.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Single phase circuit, 180
conducting angle.
Note 2. Half sine wave.
Note 3. I
G
= 800mA, di
G
/dt = 1A/
s.
Gate Characteristics: (Maximum Values)
Peak Gate Power (t = 10
s), P
GM
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, P
G (AV)
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current (t = 10
s), I
FGM
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Voltage (t = 10
s), V
FGM
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, V
RGM
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Trigger Current
I
GT
V
D
= 12V, R
L
= 33
, t
p
20
s
80
mA
Gate Trigger Voltage
V
GT
1.5
V
Gate NonTrigger Voltage
V
GD
T
J
= +125
C, V
D
= 800V, R
L
= 3.3k
0.2
V
Holding Current
I
H
I
T
= 0.5A, Gate Open
20
150
mA
Peak OnState Voltage
V
TM
I
TM
= 100A, t
p
= 10ms
1.9
V
Forward Leakage Current
I
DRM
V
DRM
= 800V
0.02
mA
T
J
= +125
C
6.0
mA
Reverse Leakage Current
I
RRM
V
DRM
= 800V
0.02
mA
T
J
= +125
C
6.0
mA
Total TurnOn Time
t
gt
I
T
= 80A, V
D
= 800V, I
G
= 200mA, di
G
/dt = 0.2A/
s
2
s
TurnOff Time
t
q
T
J
= +125
C, I
T
= 80A, V
R
= 75V, V
D
= 536V,
di
R
/dt = 30A/
s, dv/dt = 20V/
s, Gate Open
100
s
Critical Rate of Rise of
OffState Voltage
dv/dt
T
J
= +125
C, V
DRM
= 536V, Gate Open,
Linear Slope Up
500
V/
s
K
A
G
Isol
.060 (1.52)
.173 (4.4)
.215 (5.45)
.055 (1.4)
.015 (0.39)
.500
(12.7)
Min
.430
(10.92)
.550
(13.97)
.156
(3.96)
Dia.
NOTE: Dotted line indicates
that case may have square
corners.
.600 (15.24)