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Электронный компонент: NTE1709

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NTE3037
Silicon NPN Phototransistor Detector
Description:
The NTE3037 is designed for counters, Industrial and process control, sorters, switching and logic
controls. This device is packaged in a TO18 case with domed glass lid.
Features:
D
High Sensitivity
D
Base Contact Externally Available
D
Saturation Level Directly Compatible with Most TTL
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current (I
L
), I
C
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Aboce 25
C
1.2mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
30
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OptoElectrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dark Current
I
D
(I
CEO
)
V
CE
= 3V, E = 0
10
200
nA
Ligh Current
I
L
V
CE
= 3V, E = 0.1mW/cm
2
60
300
mA
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 30
A, E = 0.1mW/cm
2
0.25
0.4
V
Rise Time
t
r
V
CC
= 5V, I
C
= 10mA,
2
s
Fall Time
t
f
R
L
= 100
2
s
.276
(7.01)
Max
.177
(4.5)
.500
(12.7)
Min
.018 (0.45) Dia Typ
.100 (2.54) Dia
Base
Collector/Case
Emitter
.185 (4.69)
.228 (5.79) Max