NTE2337
Silicon NPN Transistor
High Speed Switch
Features:
D
High CollectorBase Voltage (V
CBO
)
D
Wide Area of Safety Operation (ASO)
D
Good Linearity of DC Current Gain (h
FE
)
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
900V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CES
900V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Collector Current, I
CP
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
C
= +25
C
45W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +25
C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 900V, I
E
= 0
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
100
A
Collector Emitter Voltage
V
CEO
I
C
= 10mA, I
B
= 0
500
V
DC Current Gain
h
FE1
V
CE
= 5V, I
C
= 0.1A
15
h
FE2
V
CE
= 5V, I
C
= 4A
8
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 0.8A
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 4A, I
B
= 0.8A
1.5
V
Transition Frequency
f
T
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
20
MHz
TurnOn Time
t
on
I
C
= 4A,
1.0
s
Storage Time
t
stg
I
B1
= 0.8A, I
B2
= 1.6A,
V
= 200V
3.0
s
Collector Current Fall Time
t
f
V
CC
= 200V
0.3
s
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