NTE2310
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for
use in high voltage, fast switching industrial applications.
Absolute Maximum Ratings:
CollectorEmitter Voltage (V
BE
= 0), V
CES
1000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (I
B
= 0), V
CEO
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
p
2ms)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
p
2ms)
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
C), P
D
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Charactertistics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, L = 25mH, Note 1
400
V
Collector Cutoff Current
I
CES
V
CE
= 1000V, V
BE
= 0
1
mA
V
CE
= 1000V, V
BE
= 0, T
C
= +125
C
3
mA
Emitter Cutoff Current
I
EBO
V
EB
= 9V, I
C
= 0
10
mA
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 6A, I
B
= 1.2A, Note 1
1.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 6A, I
B
= 1.2A, Note 1
1.5
V
TurnOn Time
t
on
I
C
= 6A, I
B1
= 1.2A, I
B2
= 1.2A
1
s
Storage Time
t
s
4
s
Fall Time
t
f
0.8
s
Note 1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 1.5%.
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