NTE3101
Photon Coupled Interrupter Module
NPN Darlington Output
Description:
The NTE3101 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon
Darlington connected phototransistor in a plastic housing. The package system is designed to opti-
mize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The
gap in the housing provides a means of interrupting the signal with an opaque material, switching the
output from "ON" into an "OFF" state.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Infrared Emitting Diode
Power Dissipation, P
E
100mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.33mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuos
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width
1
s, PRR
300pps)
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
R
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor
Power Dissipation, P
D
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
55V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Operating Junction Temperature Range, T
J
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 5sec max), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter Characteristics
Reverse Breakdown Voltage
V
(BR)R
I
R
= 10
A
6
V
Forward Voltage
V
F
I
F
= 60mA
1.7
V
Reverse Current
I
R
V
R
= 5V
100
nA
Capacitance
C
i
V = 0, f = 1MHz
30
pF
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
Electrical Characteristics (Cont'd): (T
A
= +25
C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Detector Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA
55
V
EmitterCollector Breakdown Voltage
V
(BR)ECO
I
E
= 100
A
6
V
Collector Dark Current
I
CEO
V
CE
= 45V
100
nA
Capacitance
C
ce
V
CE
= 5V, f = 1MHz
3.3
5.0
pF
Coupled Characteristics
Collector ON Current
I
CE(on)
V
CE
= 5V, I
F
= 5mA
0.15
mA
V
CE
= 5V, I
F
= 20mA
1.0
mA
V
CE
= 5V, I
F
= 30mA
1.9
mA
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1.8mA, I
F
= 30mA
0.4
V
TurnOn Time
t
on
V
CC
= 5V, I
F
= 30mA,
8
s
TurnOff Time
t
off
R
L
= 2.5k
50
s
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
1
.433 (11.0)
Max
.972 (24.69)
.750 (19.05)
.129 (3.28) Max
.246 (6.25)
.122
(3.1)
.295 (7.49) Max
.110 (2.79) Max
.315
(8.0)
.136 (3.45) Min
Sensing Area
Seating
Plane
+
+
D
E
D Detector
E Emitter
PDF 
ZIP