NTE38 (PNP) & NTE175 (NPN)
Silicon Complementary Transistors
High Voltage, Medium Power Switch
Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high
speed switching and linear amplifier applications for highvoltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D
CollectorEmitter Sustaining Voltage:
NTE38:
V
CEO(sus)
= 350V @ I
C
= 200mA
NTE175: V
CEO(sus)
= 300V @ I
C
= 200mA
D
Second Breakdown Collector Current:
NTE38
I
S/b
= 875mA @ V
CE
= 40V
NTE175 I
S/b
= 350mA @ V
CE
= 100V
D
Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
NTE38
350V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
NTE38
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
6Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
35W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
0.2W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, R
JC
5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
NTE38
V
CEO(sus)
I
C
= 200mA, I
B
= 0
350
V
NTE175
300
V
CollectorEmitter Sustaining Voltage
NTE38 Only
V
CEX(sus)
I
C
= 200mA, V
BE
= 1.5V, L = 10mH
400
V
V
CER(sus)
I
C
= 200mA, I
B
= 0, R
BE
= 50
375
V
EmitterBase Breakdown Voltage
NTE38 Only
V
EBO
I
E
= 0.5mA, I
C
= 0
6
V
Collector Cutoff Current
I
CEO
V
CE
= 150V, I
B
= 0
5
mA
Collector Cutoff Current
NTE38
I
CEV
V
CE
= 250V, V
BE(off)
= 1.5V
0.5
mA
V
CE
= 250V, V
BE(off)
= 1.5V, T
C
= +100
C
5.0
mA
V
CE
= 315V, V
BE(off)
= 1.5V
0.5
mA
V
CE
= 315V, V
BE(off)
= 1.5V, T
C
= +100
C
5.0
mA
V
CE
= 360V, V
BE(off)
= 1.5V
0.5
mA
V
CE
= 360V, V
BE(off)
= 1.5V, T
C
= +100
C
5.0
mA
NTE175
I
CEX
V
CE
= 450V, V
BE(off)
= 1.5V
1.0
mA
V
CE
= 300V, V
BE(off)
= 1.5V, T
C
= +150
C
3.0
mA
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
0.5
mA
ON Characteristics (Note 2)
DC Current Gain
NTE38
h
FE
I
C
= 1A, V
CE
= 4V
10
100
NTE175
I
C
= 0.1A, V
CE
= 10V
40
I
C
= 1A, V
CE
= 2V
8
80
I
C
= 1A, V
CE
= 10V
25
100
CollectorEmitter Saturation Voltage
NTE38
V
CE(sat)
I
C
= 1A, I
B
= 125mA
2.0
V
NTE175
0.75
V
BaseEmitter Saturation Voltage
NTE38
V
BE(sat)
I
C
= 1A, I
B
= 125mA
1.4
V
NTE175
I
C
= 1A, I
B
= 100mA
1.4
V
BaseEmitter ON Voltage
NTE175 Only
V
BE(on)
I
C
= 1A, V
CE
= 10V
1.4
V
Dynamic Characteristics
Current Gain Bandwidth Product
NTE38
f
T
I
C
= 200mA, V
CE
= 10V, f
test
= 5MHz,
20
MHz
NTE175
C
CE
test
Note 3
15
MHz
Output Capacitance (NTE175 Only)
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
120
pF
Note 2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Note 3. f
T
= |h
fe
|
f
test
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Second Breakdown
Second Breakdown Collector Current
NTE38
I
S/b
t = 1s (NonRepetitive), V
CE
= 40V
875
mA
NTE175
V
CE
= 100V
350
mA
Switching Characteristics
NTE38
Rise Time
t
r
V
CC
= 200V, I
C
= 1A
0.6
s
Storage Time
t
s
CC
C
I
B1
= I
B2
= 125mA
2.5
s
Fall Time
t
f
0.6
s
NTE175
Rise Time
t
r
V
CC
= 200V,
I
B1
= 100mA, R
L
= 200
3.0
s
Storage Time
t
s
CC
I
C
= 1A
I
B1
= I
B2
= 100mA
4.0
s
Fall Time
t
f
3.0
s
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Base
.580 (14.7)
.200
(5.08)
Emitter
Collector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
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