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Электронный компонент: NTE179MP

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NTE179
Germanium PNP Transistor
Audio Power Amplifier, High Current Switch
Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for highcurrent switch-
ing applications requiring low saturation voltages, fast switching times, and good safe operating
conditions.
Features:
D
Low CollectorEmitter Saturation Voltage:
V
CE(sat)
= 0.5V (Max) @ I
C
= 5A
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
90V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Volatge, V
EB
2V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
106W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
C
1.25W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
65
to + 110
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature, T
stg
65
to + 110
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.8
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100mA, I
B
= 0
40
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100mA, I
C
= 0
2
V
CollectorEmitter Sustaining Voltage
V
CE(sus)
I
C
= 5A
40
V
Collector Cutoff Current
I
CBO
V
CB
= 2V, I
E
= 0
200
A
I
CEX
V
CE
= 90V, V
BE(off)
= 0.2V
20
mA
CollectorEmitter Cutoff Current
I
CER
V
CE
= 50V, R
EB
= 100
10
mA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
h
FE
I
C
= 1A, V
CE
= 2V
65
300
I
C
= 5A, V
CE
= 2V
55
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 100mA
0.5
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 1A, V
CE
= 2V
0.45
V
I
C
= 5A, V
CE
= 2V
0.60
V
Dynamic Characteristics
Current GainBandwidth Product
f
T
I
C
= 500mA, V
CE
= 10V
500
kHz
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max