NTE2339
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D
High Breakdown Voltage, High Reliability
D
Fast Switching Speed
D
Wide Safe Operating Area
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
1100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
C
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
300
s, Duty Cycle
10%.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 800V, I
E
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
10
A
DC Current Gain
h
FE (1)
V
CE
= 5V, I
C
= 200mA
20
40
h
FE (2)
V
CE
= 5V, I
C
= 1A
8
Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
200mA
15
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
60
pF
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1.5A, I
B
= 300mA
2.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 1.5A, I
B
= 300mA
1.5
V
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
1100
V
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 5mA, R
BE
=
800
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
7
V
CollectorEmitter Sustaining Voltage V
CEX(sus)
I
C
= 1.5A, I
B1
= I
B2
= 300mA,
L = 2mH, Clamped
800
V
TurnOn Time
t
on
0.5
s
Storage Time
t
stg
V
CC
= 400V, I
B1
= 2.5A,
3.0
s
Fall Time
t
f
I
B2
=I
C
= 2A, R
L
= 200
0.3
s
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.114 (2.9) Max
.173 (4.4) Max
B
C
E
.122 (3.1)
Dia
NOTE: Tab is isolated
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