NTE322
Silicon NPN Transistor
RF Power Output
Description:
The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citi-
zenBand and other highfrequency communications equipment operating to 30MHz. Higher break-
down voltages allow a high percentage of upmodulation in AM circuits.
Features:
D
Output Power: 3.5W (Min) @ V
CC
= 13.6V
D
Power Gain: 11.5dB (Min)
D
High Collector Emitter Breakdown Voltage: V
(BR)CES
65V
D
DC Current Gain: Linear to 500mA
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CES
65V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C), P
D
1.0W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
8.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
80mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
12.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient (Note 1), R
thJA
125
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. R
thJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CES
I
C
= 150mA, V
BE
= 0, Note 2
65
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
3
V
Collector Cutoff Current
I
CBO
V
CB
= 50V, I
E
= 0
0.01
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 100mA, V
CE
= 10V, Note 3
10
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 12V, I
E
= 0, f = 1MHz
40
pF
Functional Test
CommonEmitter Amplifier Power Gain
G
PE
P
O
= 3.5W, V
CC
= 13.6V, f = 27MHz
11.5
dB
Output Power
P
O
P
IN
= 250mW, V
CC
= 13.6V, f = 27MHz
3.5
W
Collector Efficiency
P
O
= 3.5W, V
CC
= 13.6V, f = 27MHz,
Note 4
70
%
Percentage UpModulation
f = 27MHz, Note 5
85
%
Note 2. Pulsed thru a 25mH inductor
Note 3. Pulse test: Pulse Width
300
s, Duty Cycle
2.0%
Note 4.
=
R
F
P
O
(V
CC
) (I
C
)
100
Note 5. Percentage UpModulation is measured by setting the Carrier Power (P
C
) to 3.5 Watts with
V
CC
= 13.6V and noting the power input. Then the peak envelope power (PEP) is noted after
doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther-
mal considerations) and raising the V
CC
to 25V (to simulate the modulating voltage). Per-
centage UpModulation is then determined by the relation:
Percentage UpModulation =
PEP
P
C
1/2
1
100
27MHz Test Circuit
INPUT
C1
L1
C2
RFC1
RFC2
L2
C4
C3
C5
C6
OUTPUT
V
CC
13.6V
C1, C2
9.0 180pF ARCO 463 or Equivalent
C3, C4
5.0 80pF ARCO 462 or Equivalent
C5
0.02
F Ceramic Disc
C6
0.1
F Ceramic Disc
RFC1
4 Turns #30 Enameled Wire Wound on
Ferroxcube Bead Type 5659065/3B
RFC2
26 Turns #22 Enameled Wire (2 Layers
13 Turns Each Layer)
1
/
4
" Inner Diameter
L1
0.22
H Molded Choke
L2
0.68
H Molded Choke
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