NTE2519 (NPN) & NTE2520 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D
High Breakdown Voltage
D
Large Current Capacity
D
Isolated Package
Applications:
D
Color TV Audio Output
D
Converters
D
Inverters
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
180V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
160V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
2.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
C
1.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 120V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 100mA
140
400
V
CE
= 5V, I
C
= 10mA
90
Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 50mA
120
MHz
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Capacitance
NTE2519
C
ob
V
CB
= 10V, f = 1MHz
14
pF
NTE2520
22
pF
Collector to Emitter Saturation Voltage
NTE2519
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
0.13
0.45
V
NTE2520
0.2
0.5
V
Base to Emitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
0.85
1.2
V
Collector to Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
180
V
Collector to Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
160
V
Emitter to Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
6
V
Rise Time
t
on
I
C
= 10A, I
B1
= 10A,
0.04
s
Storage Time
NTE2519
t
stg
I
B2
= 700mA, Note 1
1.2
s
NTE2520
0.7
s
Fall Time
NTE2519
t
f
0.08
s
NTE2520
0.04
s
Note 1. Pulse Width = 20
s, Duty Cycle
1%.
E
C
B
.315 (8.0)
.130
(3.3)
.295
(7.5)
.433
(11.0)
.610
(15.5)
.118 (3.0)
Dia
.094 (2.4)
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