ChipFind - документация

Электронный компонент: NTE1906

Скачать:  PDF   ZIP
NTE230
Silicon Controlled Rectifier (SCR)
TV Deflection Circuit
Features:
D
CTV 110
CRT Horizontal Deflection
D
Tracer Switch
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (T
J
= +100
C), V
DRM
750V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak Forward Voltage (T
J
= +100
C), V
DSM
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage, V
RRM
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (Note 1), I
T(RMS)
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average OnState Current (Note 1), I
T(AV)
3.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Current (Note 1), I
TSM
50Hz
60A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60Hz
70A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Critical RateofRise of OnState Current, di/dt
200A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power Dissipation (Note 2), P
GM
25W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, P
G(AV)
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Minimum Peak Reverse Gate Voltage, V
GM
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
4
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Single Phase, Half Sine Wave at 50Hz, T
C
= +60
C
Note 2. 10
s duration
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak OffState Current
I
DRM
V
DRM
= 750V, T
J
= +100
C
1.5
mA
Peak OnState Voltage
V
TM
I
TM
= 20A, T
C
= +25
C
3.0
V
DC Gate Trigger Current
I
GT
T
C
= 40
C V
D
= 6V, R
L
= 10
50
mA
T
C
= +25
C
30
mA
Electrical Characteristics (Cont'd):
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DC Gate NonTrigger Voltage
V
GD
V
D
= 750V, T
C
= +100
C
0.2
V
DC Gate NonTrigger Current
I
GD
V
D
= 750V, T
C
= +100
C
1.0
mA
Holding Current
I
H
V
D
= 6V, R
L
= 10
100
mA
TurnOff Time
t
q
I
TM
= 8A, di/dt = 20A/
s,
V
D
= 610V, dv/dt = 700V/
s,
f = 15.7kHz, T
C
= +70
C, V
G
= 25V
2.5
s
Critical Exponential
RateofRise of Forward
Blocking State Voltage
dv/dt
V
DRM
= 500V, V
G
= 2.5V,
T
C
= +70
C, R
G
= 100
700
V/
s
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Gate
.580 (14.7)
.200
(5.08)
Cathode
Anode/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)