NTE2511 (NPN) & NTE2512 (PNP)
Silicon Complementary Transistors
High Frequency Video Output for HDTV
Features:
D
High Gain Bandwidth Product: f
T
= 800MHz Typ.
D
Low Reverse Transfer Capacitance and Excellent HF Response:
NTE2511: C
re
= 2.9pF
NTE2512: C
re
= 4.6pF
Applications:
D
Very HighDefinition CRT Display
D
Video Output
D
Color TV Chroma Output
D
WideBand Amp
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter base Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
C
1.2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 60V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 2V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 50mA
100
320
V
CE
= 10V, I
C
= 400mA
20
Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 100mA
800
MHz
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Emitter Saturation Voltage
NTE2511
V
CE(sat)
I
C
= 100mA, I
B
= 10mA
0.6
V
NTE2512
0.8
V
Base Emitter Saturation Voltage
V
BE(sat)
I
C
= 100mA, I
B
= 10mA
1.0
V
Collector Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
80
V
Collector Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
60
V
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
4
V
Output Capacitance
NTE2511
C
ob
V
CB
= 30V, f = 1MHz
3.4
pF
NTE2512
5.2
pF
Reverse Transfer Capacitance
NTE2511
C
re
V
CB
= 30V, f = 1MHz
2.9
pF
NTE2512
4.6
pF
.330 (8.38)
Max
.450
(11.4)
Max
.655
(16.6)
Max
.130 (3.3)
Max
.175
(4.45)
Max
.030 (.762) Dia
.090 (2.28)
.118 (3.0)
Dia
E
C
B
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