NTE2386
MOSFET
NChannel Enhancemen Mode,
High Speed Switch
Description:
The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching,
ease of paralleling and temperature stability, and is suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings:
Continuous Drain Current, I
D
(T
C
= +25
C)
6.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(T
C
= +100
C)
2.8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
DM
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation (T
C
= +25
C), P
D
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Derate linearly above +25
C)
1.0W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GatetoSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy (Note 2), E
AS
670mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Repetitive or NonRepetitive, Note 1), I
AR
6.2A
. . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
13mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery (Note 3), dv/dt
3.0V/mS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case for 10s), T
L
+300
C
. . . . . . . . . .
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Breakdown Voltage
DraintoSource
BV
DSS
V
GS
= 0V, I
D
= 250
A
600
V
Static DraintoSource
OnState Resistance
R
DS(on)
V
GS
= 10V, I
D
= 3.4A, Note 4
0.97
1.2
OnState Drain Current
I
D(on)
V
DS
> I
D
(on) x R
DS
(on) Max,
V
GS
= 10V, Note 4
6.2
A
Gate Threshold Voltage
V
GS(HL)
V
DS
= V
GS
, I
D
= 250
A
2.0
4.0
V
Forward Transconductance
gs
V
DS
= 60V, I
DC
= 3.4A, Note 4
4.7
70
mhos
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Max. Rating V
CS
= 0V
250
A
V
DS
= 0.8 x Max Rating , V
SS
= 0V,
T
J
= 125
C
1000
Forward Leakage Current
GatetoSource
I
GSS
V
GS
= 20V
100
nA
Reverse Leakage Current
GatetoSource
I
GSS
V
GS
= 20V
100
nA
Total Gate Charge
Q
g
4.0
80
nC
GatetoSource Charge
Qgs
V
GS
= 10V, I
D
= 6.2A,
V
DS
= 0.8 x Max Rating
6.5
8.2
nC
GatetoDrain ("Miller") Charge
Qgd
DS
(independent of operating temperature)
20
30
nC
TurnOn Delay Time
t
d(on)
1.3
20
ns
Rise Time
t
r
V
DD
= 300V, f
D
= 6.2A,
18
27
TurnOff Delay Time
t
d(off)
R
G
= 9.1
,
R
D
= 47
(independent at operating temperature)
65
83
Fall Time
t
f
(independent at operating temperature)
20
20
Internal Drain Inductance
L
D
Measured from the drain lead, 6mm
(0.25 In) from packaged to center of
die.
5.0
nH
Internal Source Inductance
L
S
Measured from the source lead, 6mm
(0.25 in) from package to source
bonding pad.
18
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
1300
pF
Output Capacitance
C
oss
150
Reverse Transfer Capacitance
C
rss
30
SourceDrain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
I
S
6.2
A
Pulsed Source Current
(Body Diode)
I
SM
Note 1
26
A
Diode Forward Voltage
V
SO
T
J
= 25
C, I
S
= 6.2A, V
GS
= 0V, Note 4
1.5
V
Reverse Recovery Time
t
rr
T
J
= 25
C, I
F
= 6.2A
di/dt = 100A/
s
1.8
3.6
7.9
C
Forward TurnOn Time
t
on
Intrinsic turnon time is negligible Turn on speed is substantially
controlled by L
S
+ L
D
PDF 
ZIP