NTE199
Silicon NPN Transistor
Low Noise, High Gain Amplifier
Description:
The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Steady State Collector Current (Note 1), I
C
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C), P
T
360mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
3.3mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +55
C), P
T
260mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
3.3mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 10sec max), T
L
+260
C
. . . . . . . . . . . . . . . . .
Note 1. Determined from power limitations due to saturation voltages at this current
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector Cutoff Current
I
CBO
V
CB
= 50V
30
nA
V
CB
= 50V, T
A
= +100
C
10
A
Collector Cutoff Current
I
CES
V
CB
= 50V
30
nA
Emitter Cutoff Current
I
EBO
V
EB
= 5V
50
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics (Cont'd)
Forward Current Transfer Ratio
h
FE
V
CE
= 5V, I
C
= 2mA
400
800
V
CE
= 5V, I
C
= 100
A, Note 2
300
Breakdown Voltage
CollectortoEmitter
V
(BR)CEO
I
C
= 10mA, Note 3
50
V
Breakdown Voltage
CollectortoBase
V
(BR)CBO
I
C
= 10
A
70
V
Breakdown Voltage
EmittertoBase
V
(BR)EBO
I
E
= 10
A
5
V
Collector Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 1mA, Note 3
0.125
V
Base Saturation Voltage
V
BE(sat)
I
C
= 10mA, I
B
= 1mA, Note 3
0.78
V
Base Emitter ON Voltage
V
BE(on)
V
CE
= 10V, I
C
= 2mA
0.5
0.9
V
Dynamic Characteristics
Forward Current Transfer Ratio
h
fe
V
CE
= 5V, I
C
= 2mA, f = 1kHz
400
1200
Output Capacitance,
Common Base
C
cb
V
CB
= 10V, I
E
= 0, f = 1kHz
4
pF
Noise Figure
NF
I
C
= 100
A, V
CE
= 5V,
R
g
= 5k
, f = 1kHz
3
dB
Note 2. Typically, a minimum of 95% of the distribution is above this value.
Note 3. Pulse Test: Pulse Width
300
s, Duty Cycle
2%
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
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