NTE210 (NPN) & NTE211 (PNP)
Silicon Complementary Transistors
General Purpose Output & Driver
Description:
The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack-
age designed for general purpose, medium voltage, medium power amplifier and driver applications
such as series, shunt and switching regulators, and low and high frequency inverters and converters.
Features:
D
TO202 Type Package: 2W Free Air Dissipation @ T
A
= +25
C
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CES
90V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C, Note 2), P
D
1.67W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
13.3mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
6.25W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
50mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 10sec), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoAmbient, R
thJA
75
C/W
. . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
20
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width
300
s.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ T
A
= +25
C.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
75
V
Collector Cutoff Current
I
CES
V
CE
= 90V
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 5V
100
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 3)
DC Current Gain
h
FE
I
C
= 100mA, V
CE
= 2V
120
360
I
C
= 1A, V
CE
= 2V
10
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
1.5
V
Dynamic Characteristics
CurrentGain Bandwidth Product
f
T
I
C
= 20mA, V
CE
= 10V, f = 20MHz
75
375
MHz
CollectorBase Capacitance
NTE210
C
cb
V
CB
= 20V, I
E
= 0, f = 1MHz
12
pF
NTE211
18
pF
Note 3. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
.070 (1.78) x 45
Chamf
.132 (3.35) Dia
.050 (1.27)
.325
(9.52)
.180 (4.57)
.380 (9.56)
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.400
(10.16)
Min
.100 (2.54)
.100 (2.54)
C
E
B
C
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