NTE213
Germanium PNP Transistor
High Power, High Gain Amplifier
Description:
The NTE213 is a germanium PNP power transistor in a TO36 type package designed highpower,
highgain applications in highreliability industrial equipment.
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CES
75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
170W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.5W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +110
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Elwectrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1A, I
B
= 0, Note 1
60
V
V
(BR)CES
I
C
= 300mA, V
BE
= 0, Note 1
75
V
Floating Potential
V
EBF
V
CB
= 75V, I
E
= 0
1.0
V
Collector Cutoff Current
I
CBO
V
CB
= 2V, I
E
= 0
0.8
0.2
mA
V
CB
= 74V, I
E
= 0
0.9
4.0
mA
V
CB
= 75V, I
E
= 0, T
C
= +71
C
4.0
15
mA
Emitter Cutoff Current
I
EBO
V
BE
= 25V, I
C
= 0
0.2
4.0
mA
V
BE
= 30V, I
C
= 0
0.2
4.0
mA
V
BE
= 40V, I
C
= 0
0.2
4.0
mA
V
BE
= 40V, I
C
= 0, T
C
= +71
C
2.7
15
mA
Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
V
CB
= 2V, I
C
= 5A
50
75
100
V
CB
= 2V, I
C
= 15A
25
47
V
CB
= 2V, I
C
= 25A
15
38
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 500mA
0.06
0.1
V
I
C
= 25A, I
B
= 2A
0.2
0.3
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 5A, I
B
= 500mA
0.65
1.0
V
I
C
= 25A, I
B
= 2A
1.0
2.0
V
Dynamic Characteristics
CommonEmitter Cutoff Frequency
f
e
V
CE
= 6V, I
C
= 5A
2.0
2.7
kHz
.520 (13.2)
Max
1032 UNF2A
.190 (4.83)
.345 (8.76)
.312 (7.93)
Collector/Case
1.005 (25.55)
Dia Max
1.250 (31.75
Dia Max
.710
(18.03)
Max
.500
(12.7)
Max
Emitter
Base
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