NTE221
MOSFET
Dual Gate, NChannel for
VHF TV Receivers Applications
Description:
The NTE221 is an Nchannel depletion type, dualinsulated gate, fieldeffect transistor that utilizes
MOS construction. This device has characteristics which makes it highly desirable for use in RFam-
plifier applications.
Features:
D
Extremely Low Feedback Capacitance
D
High Power Gain
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
DraintoSource Voltage, V
DS
0 to +20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate 1toSource Voltage, V
G1S
Continuous (DC)
+1V to 8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak AC
+20V to 8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate 2toSource Voltage, V
G2S
Continuous (DC)
8V to 40% of V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak AC
8V to +20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DraintoGate Voltage, V
DG1
or V
DG2
+20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
D
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transistor Dissipation (T
A
= +25
C), P
T
400mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25
C
2.67mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
opr
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/32" from seating surface, 10sec max), T
L
+265
C
. . . . . . . .
Note 1. Pulse test: Pulse Width
20ms, Duty Cycle
15%.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate 1toSource Cutoff Voltage
V
G1S
(off) V
DS
= 15V, V
G2S
= 4V, I
D
= 200mA
2
V
Gate 2toSource Cutoff Voltage
V
G2S
(off) V
DS
= 15V, V
G1S
= 0, I
D
= 200mA
2
V
Gate 1 Leakage Current
I
G1SS
V
G1S
= 20V, V
G2S
= 0, V
DS
= 0
1
nA
Gate 2 Leakage Current
I
G2SS
V
G2S
= 20V, V
G1S
= 0, V
DS
= 0
1
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain Current
I
DSS
V
DS
= 13V, V
G1S
= 0, V
G2S
= 4V
18
mA
Forward Transconductance
g
fs
V
DS
= 13V, I
D
= 10mA, V
G2S
= 4V,
f = 1kHz
1000
mhos
Performance Characteristics: (T
A
= +25
C, f = 200MHz, Note 2 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SmallSignal, Short Circuit Reverse
Transfer Capacitance
C
rss
(DraintoGate 1) at f = 1MHz
0.02
0.03
pF
Output Capacitance
C
oss
2.2
pF
Input Capacitance
C
iss
5.5
pF
Input Resistance
r
iss
1.2
k
Output Resistance
r
oss
2.8
k
Magnitude of Forward Transconductance
|Y
fs
|
11000
mhos
Phase Angle of Forward Transadmittance
46
deg
Maximum Available Power Gain
MAG
20
dB
Maximum Usable Power Gain
(Unneutralized)
MUG
u
Note 3
20
dB
Power Gain
G
PS
17.5
dB
Noise Figure
NF
5
dB
Note 2. V
G1S
is adjusted for I
D
= 10mA, Gate 2 at AC ground potential, V
DS
= 13V, V
G2S
= 4V.
Note 3. Limited by practical design considerations.
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
45
Drain
Gate 2
Gate 1
Source/Case
.190
(4.82)
.500
(12.7)
Min
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