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Электронный компонент: NTE226

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NTE226
Germanium PNP Transistor
Audio Power Amp
Description:
The NTE226 is a Germanium PNP transistor in a TO66 type package designed for highfidelity, high
power output applications.
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (R
BE
= 100
), V
CER
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
C), P
C
12W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 25V, I
E
= 0
200
A
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
200
A
DC Current Gain
h
FE
V
CE
= 1.5V, I
C
= 200mA
50
100 275
SmallSignal Current Gain Resistance
f
ob
V
CE
= 1.5V, I
C
= 200mA
0.7
MHz
Base Spreading Resistance
r
bb
V
CE
= 1.5V, I
C
= 200mA, f = 6MHz
15
.593 (15.08)
Dia
.031
(.792)
.290 (7.36)
.295 (7.5)
.039 (1.0) Dia
.944 (24.0)
Base
.530 (13.5)
.315
(8.0)
Emitter
Collector/Case
.157 (4.0)
Dia
(2 Places)