NTE2320
Silicon NPN/PNP Transistor
Quad, General Purpose Switch, Amp
(Complementary Pair)
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C, Each Die, Note 1), P
D
0.65W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
5.18mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C, Four Die Equal Power, Note 1), P
D
1.25W
. . . . . . . . . . . . . . . .
Derate Above 25
C
10mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C, Each Die, Note 1), P
D
1.0W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
8.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C, Four Die Equal Power, Note 1), P
D
3.0W
. . . . . . . . . . . . . . . .
Derate Above 25
C
24mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Reistance, JunctiontoAmbient, R
thJA
Each Die
193
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Effective, 4 Die
100
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Reistance, JunctiontoCase, R
thJC
Each Die
125
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Effective, 4 Die
41.6
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupling Factors, JunctiontoAmbient
Q1Q4 or Q2Q3
60%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q1Q2 or Q3Q4
24%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupling Factors, JunctiontoCase
Q1Q4 or Q2Q3
30%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q1Q2 or Q3Q4
20%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Voltage and current are negative for PNP transistors.
Electrical Characteristics: (T
A
= +25
C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 2
30
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
60
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V
Collector Cutoff Current
I
CBO
V
CB
= 50V, I
E
= 0
30
nA
Emitter Cutoff Current
IE
BO
V
EB
= 3V, I
C
= 0
30
nA
ON Characteristics (Note 3)
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 1mA
50
V
CE
= 10V, I
C
= 10mA
75
V
CE
= 10V, I
C
= 150mA
100
V
CE
= 10V, I
C
= 300mA
20
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 150mA, I
B
= 15mA
0.4
V
I
C
= 300mA, I
B
= 30mA
01.4
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 150mA, I
B
= 15mA
1.3
V
I
C
= 300mA, I
B
= 30mA
2.0
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
V
CE
= 20V, I
C
= 50mA, f = 100MHz,
Note 3
200
350
MHz
Output Capacitance
NPN
C
obo
V
CB
= 10V, I
E
= 0, f = 1MHz
6.0
8.0
pF
PNP
4.5
8.0
pF
Input Capacitance
NPN
C
ibo
V
EB
= 2V, I
C
= 0, f = 1MHz
20
30
pF
PNP
17
30
pF
Switching Characteristics
TurnOn Time
t
on
V
CC
= 30V, V
EB
= 0.5V, I
C
= 150mA,
I
B1
= 15mA
30
ns
TurnOff Time
t
off
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
225
ns
Note 1. Voltage and current are negative for PNP transistors.
Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
Note 3. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
PDF 
ZIP