NTE2328 (NPN) & NTE2329 (PNP)
Silicon Complementary Transistors
Audio Power Output
Features:
D
Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 200V, I
E
= 0
5.0
A
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
5.0
A
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
200
V
DC Current Gain
h
FE1
V
CE
= 5V, I
C
= 1A
55
160
h
FE2
V
CE
= 5V, I
C
= 8A
35
60
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 1A
1.5
3.0
V
BaseEmitter Voltage
V
BE
V
CE
= 5V, I
C
= 8A
1.0
1.5
V
Transistion Frequency
f
T
V
CE
= 5V, I
C
= 1A
25
MHz
Collector Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
470
pF
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