NTE2333
Silicon NPN Power Transistor
for Switching Power Applications
Description:
The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line
operated Switchmode Power supplies and electronic light ballasts.
Features:
D
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain h
FE
Fast Switching
No Coil Required in Base Circuit for TurnOff (No Current Tail)
Absolute Maximum Ratings:
CollectorEmitter Sustaining Voltage, V
CEO
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Breakdown Voltage, V
CES
1000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
9V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
0.8W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
1.25
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoAmbient, R
thJA
62.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from Case for 5sec), T
L
+260
C
. . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
10%.
Note 2. Proper strike and creepage distance must be provided.
Electrical Characteristics: (T
C
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus
)
I
C
= 100mA, L = 25mH
450
V
Collector Cutoff Current
I
CEO
V
CE
= 450V, I
B
= 0
100
A
I
CES
V
CE
= 1000V, V
EB
= 0
100
A
V
CE
= 1000V, V
EB
= 0, T
C
= +125
C
500
A
V
CE
= 800V, V
EB
= 0, T
C
= +125
C
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 9V, I
C
= 0
100
A
ON Characteristics
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 1.3A, I
B
= 0.13A
0.83
1.2
V
I
C
= 3A, I
B
= 0.6A
0.94
1.3
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1.3A, I
B
= 0.13A
0.25
0.6
V
T
C
= +125
C
0.27
0.65
V
I
C
= 3A, I
B
= 0.6A
0.35
0.7
V
T
C
= +125
C
0.4
0.8
V
DC Current Gain
h
FE
I
C
= 0.5A, V
CE
= 5V
14
34
T
C
= +125
C
32
I
C
= 3A, V
CE
= 1V
6
10
V
T
C
= +125
C
5
8
I
C
= 1.3A, V
CE
= 1V
T
C
= +25
C
11
17
I
C
= 10mA, V
CE
= 5V
to +125
C
10
22
Dynamic Characteristics
Current Gain Bandwidth Product
f
T
I
C
= 0.5A, V
CE
= 10V, f = 1MHz
14
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
B
= 0, f = 1MHz
75
120
pF
Input Capacitance
C
ib
V
EB
= 8V
1000 1500
pF
Dynamic Saturation Voltage:
V
CE(dsat)
I
C
= 1.3A,
1
s
5.5
V
Determined 1
s and 3
s respectively
after rising I reaches 90% of final
I
B1
= 130mA,
V
= 300V
T
C
= +125
C
12.0
V
after rising I
B1
reaches 90% of final
I
B1
V
CC
= 300V
3
s
3.0
V
B1
T
C
= +125
C
7.0
V
I
C
= 3.0A,
1
s
9.5
V
I
B1
= 600mA,
V
= 300V
T
C
= +125
C
14.5
V
V
CC
= 300V
3
s
2.0
V
T
C
= +125
C
7.5
V
Switching Characteristics: Resistive Load (DC
10%, Pulse Width = 20
s)
TurnOn Time
t
on
I
C
= 3A, I
B1
= 600mA,
90
180
ns
I
B2
= 1.5A, V
CC
= 300V
T
C
= +125
C
100
ns
TurnOff Time
t
off
1.7
2.5
s
T
C
= +125
C
2.1
s
TurnOn Time
t
on
I
C
= 1.3A, I
B1
= 130mA,
200
300
ns
I
B2
= 650mA,
V
= 300V
T
C
= +125
C
130
ns
TurnOff Time
t
off
V
CC
= 300V
1.2
2.5
s
T
C
= +125
C
1.5
s
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