NTE2334
Silicon NPN Transistor
Darlington Driver
w
/Internal Damper
and Zener Diode
Description:
The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220
type package designed for use in applications such as the switching of the L load of a motor driver,
hammer driver, relay driver, etc.
Features:
D
High DC Current Gain
D
Large Current Capacity and Wide ASO
D
Contains 60
10V Avalanche Diode between Collector and Base
D
High 50mJ Reverse Energy Rating
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
40W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
BE
= 40V, I
E
= 0
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
3
mA
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 2.5A
1000 4000
Gain Bandwidth Product
f
T
V
CE
= 5V, I
C
= 2.5A
20
MHz
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 2.5A, I
B
= 5mA
0.9
1.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 2.5A, I
B
= 5mA
2.0
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 5mA, I
E
= 0
50
60
70
V
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 50mA, R
BE
=
50
60
70
V
Unclamped Inductive Load Energy
E
s/b
L = 100mH, R
BE
= 100
50
mJ
TurnOn Time
t
on
V
CC
= 20V, I
C
= 3A,
0.6
s
Storage Time
t
stg
I
B1
= I
B2
= 6mA
4.0
s
Fall Time
t
f
1.5
s
B
C
E
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Base
.100 (2.54)
Collector/Tab
Emitter
.147 (3.75)
Dia Max
PDF 
ZIP