NTE2347
Silicon NPN Transistor
General Purpose, Medium Power
Description:
The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Absolute Maximum Ratings:
CollectorBase Voltage (I
E
= 0), V
CBO
150V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (I
B
= 0), V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (I
C
= 0), V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
tot
T
A
+25
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
+25
C
7W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
+100
C
4W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
25
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
175
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CES
V
CE
= 150V, V
BE
= 0
1
mA
V
CE
= 100V, V
BE
= 0
1
A
V
CE
= 100V, V
BE
= 0, T
C
= +150
C
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
1
mA
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 50mA, I
B
= 0, Note 1
80
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 500mA, Note 1
1
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 5A, I
B
= 500mA, Note 1
1.6
V
DC Current Gain
h
FE
I
C
= 2A, V
CE
= 2V, Note 1
40
120
I
C
= 2A, V
CE
= 2V, T
C
= 55
C, Note 1
15
Transition Frequency
f
T
I
C
= 500mA, V
CE
= 5V
50
MHz
CollectorBase Capacitance
C
CBO
V
CB
= 10V, I
E
= 0, f = 1MHz
80
pF
TurnOn Time
t
on
V
CC
= 20V, I
C
= 500mA, I
B1
= 500mA
0.35
s
Storage Time
t
s
V
CC
= 20V, I
C
= 5A, I
B1
= I
B2
= 500mA
0.35
s
Fall Time
t
f
0.3
s
Note 1. Pulse Test: Pulse Duration = 300
s, Duty Cycle = 1.5%.
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