NTE2349 (NPN) & NTE2350 (PNP)
Silicon Darlington Transistors
High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.
Features:
D
High DC Current Gain:
h
FE
= 1000 (Min) @ I
C
= 25A
h
FE
= 400 (Min) @ I
C
= 50A
D
Diode Protection to Rated I
C
D
Monolithic Construction
w
/BuiltIn BaseEmitter Shunt Resistor
D
Junction Temperature to +200
C
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
100A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
300W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C @ T
C
= +100
C
1.71W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.584
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec Max), T
L
+275
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 100mA, I
B
= 0
120
V
CollectorEmitter Leakage Current
I
CER
V
CE
= 120V, R
BE
= 1k
2
mA
V
CE
= 120V, R
BE
= 1k
, T
C
= +150
C
10
mA
I
CEO
V
CE
= 50V, I
B
= 0
2
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
2
mA
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 25A, V
CE
= 5V
1000
18000
I
C
= 50A, V
CE
= 5V
400
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 25A, I
B
= 250mA
2.5
V
I
C
= 50A, I
B
= 500mA
3.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 25A, I
B
= 200mA
3.0
V
I
C
= 50A, I
B
= 300mA
4.5
V
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Schematic Diagram
NPN
PNP
B
C
E
B
C
E
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.061 (1.55) Max
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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