NTE2353
Silicon NPN Transistor
TV Horizontal Deflection Output
w
/Damper Diode
Features:
D
High Speed: t
f
= 100nsec
D
High Breakdown Voltage: V
CBO
= 1500V
D
OnChip Damper Diode
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
C
70W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CES
V
CE
= 1500V
1.0
mA
I
CBO
V
CB
= 800V
10
A
Collector Sustain Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0
800
V
Emitter Cutoff Current
I
EBO
V
EB
= 4V
40
130
mA
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
= 8A, I
B
= 1.6A
5
V
Base Emitter Saturation Voltage
V
BE(sat)
I
C
= 8A, I
B
= 1.6A
1.5
V
DC Current Gain
h
FE1
V
CE
= 5V, I
C
= 1A
8
h
FE2
V
CE
= 5V, I
C
= 8A
5
10
Diode Forward Voltage
V
F
I
EC
= 10A
2.0
V
FallTime
t
f
I
C
= 6A, I
B1
= 1.2A, I
B2
= 2.4A
0.1
0.3
s
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