NTE2361 (NPN) & NTE2362 (PNP)
Silicon Complementary Transistors
High Speed Switch
Description:
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for gener-
alpurpose amplifier and high speed switching applications. The high gain of these devices makes
it possible for them to be driven directly from integrated circuits.
Features:
D
Very SmallSized Package
D
High Breakdown Voltage: V
CEO
= 50V
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
800mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 40Vdc, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
BE
= 4Vdc
0.1
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 10mA
200
400
Gain Bandwidth Product
f
T
V
CE
= 10V,
NTE2361
200
MHz
I
C
= 50mA
NTE2362
300
MHz
Electrical Characteristics (Cont'd): (T
C
= 25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Capacitance
C
ob
V
CB
= 10Vdc,
NTE2361
5.6
pF
f = 1MHz
NTE2362
3.7
pF
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 100mA,
NTE2361
0.15
0.4
V
I
B
= 10mA
NTE2362
0.1
0.3
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 100mA, I
B
= 10mA
0.8
1.2
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
60
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 100
A, R
BE
=
50
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
=
5
V
Rise Time
t
on
V
CC
= 20V,
70
ns
Storage Time
t
stg
I
C
= 100mA,
I
B1
= 10mA,
400
ns
Fall Time
t
f
B1
I
B2
= 100mA
NTE2361
50
ns
NTE2362
70
ns
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Note 2. Conditions apply to both except where noted.
E C B
.165 (4.2)
Max
.071
(1.8)
.126
(3.2)
Max
.500
(12.7)
Max
.102
(2.6)
Max
.035 (0.9)
.050 (1.27)
.050 (1.27)
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