NTE2363 (NPN) & NTE2364 (PNP)
Silicon Complementary Transistors
High Current General Purpose Amp/Switch
Features:
D
Low Saturation Voltage
D
Large Current Capacity and Wide ASO
Applications:
D
Power Supplies
D
Relay Drivers
D
Lamp Drivers
D
Automotive Wiring
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Allowable Collector Dissipation, P
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Ambient Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 For PNP device (NTE2364), voltage and current values are negative.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
0.1
A
DC Current Gain
h
FE
(1)
V
CE
= 2V, I
C
= 100mA
200
400
h
FE
(2)
V
CE
= 2V, I
C
= 1.5A
40
Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 50mA
150
MHz
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Capacitance
NTE2363
c
ob
V
CB
= 10V, f = 1MHz
12
pF
NTE2364
22
pF
CollectorEmitter Saturation Voltage
NTE2363
V
CE(sat)
I
C
= 1A, I
B
= 50mA
0.15
0.4
V
NTE2364
0.3
0.7
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 1A, I
B
= 50mA
0.9
1.2
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
60
V
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 1mA, R
BE
=
50
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
6
V
.102 (2.6) Max
.024 (0.62) Max
.236 (6.0)Dia Max
.018 (0.48)
.059 (1.5) Typ
.197 (5.0)
.343
(8.73)
Max
.492
(12.5)
Min
E C B
.102 (2.6) Max
.118 (3.0) Max
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