NTE2369 (NPN) & NTE2370 (PNP)
Silicon Complementary Transistors
Digital
w
/2 BuiltIn 4.7k Bias Resistors
Features:
D
BuiltIn Bias Resistor (R
1
= 4.7k
, R
2
= 4.7k
)
D
SmallSized Package (TO92 type)
Applications:
D
Switching Circuit
D
Inverter
D
Interface Circuit
D
Driver
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
NTE2369
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2370
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +160
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 40V, I
E
= 0
0.1
A
I
CEO
V
CE
= 40V, I
B
= 0
0.5
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
170
250
330
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 10mA
80
Current GainBandwidth Product
NTE2369
f
T
V
CE
= 10V, I
C
= 5mA
250
MHz
NTE2370
200
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
3.0
pF
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5mA, I
B
= 0.25mA
0.1
0.3
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
50
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 100
A, R
BE
=
50
V
Input OFF Voltage
V
I(off)
V
CE
= 5V, I
C
= 100
A
0.5
0.8
V
Input ON Voltage
V
I(on)
V
CE
= 200mV, I
C
= 5mA
0.7
1.3
V
Input Resistance
R
1
3.29
4.7
6.11
k
Input Resistance Ratio
R
1
/R
2
0.09
0.1
0.11
R
1
R
2
Collector
(Output)
Base
(Input)
Emitter
(GND)
PNP
NPN
R
1
R
2
Collector
(Output)
Base
(Input)
Emitter
(GND)
Schematic Diagram
E C B
.165 (4.2)
Max
.071
(1.8)
.126
(3.2)
Max
.500
(12.7)
Max
.102
(2.6)
Max
.035 (0.9)
.050 (1.27)
.050 (1.27)
PDF 
ZIP