NTE2379
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Features:
D
Dynamic dv/dt Rating
D
Repetitive Avalanche Rated
D
Fast Switching
D
Ease of Paralleling
D
Simple Drive Requirements
Absolute Maximum Ratings:
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous (V
GS
= 10V)
T
C
= +25
C
6.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
3.9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current (Pulsed), I
GM
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 2), E
AS
570mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AR
6.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
13mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
3V/ns
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.0W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/16" from case, 10sec), T
L
+300
C
. . . . . . . . . . . .
Thermal Resistance:
Maximum JunctiontoCase, R
thJC
1.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical CasetoSink (Mounting surface flat, smooth, and greased), R
thCS
0.5
C/W
. . . . . .
Maximum JunctiontoAmbient (Free Air Operation), R
thJA
62
C/W
. . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. V
DD
= 50V, starting T
J
= +25
C, l = 27mH, R
G
= 25
, I
AS
= 6.2A.
Note 3. I
SD
6.2A, di/dt
80A/
A, V
DD
V
(BR)DSS
, T
J
+150
C.
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
600
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.0
4.0
V
GateSource Leakage Forward
I
GSS
V
GS
= 20V
100
nA
GateSource Leakage Reverse
I
GSS
V
GS
= 20V
100
nA
DrainSource Leakage Current
I
DSS
V
DS
= 600V, V
GS
= 0
100
A
V
DS
= 480V, V
GS
= 0, T
C
= +150
C
500
A
Static DrainSource ON Resist-
ance
R
DS(on)
V
GS
= 10V, I
D
= 3.7A, Note 4
1.2
Forward Transconductance
g
fs
V
DS
100V, I
D
= 3.7A, Note 4
4.7
mhos
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
1300
pF
Output Capacitance
C
oss
160
pF
Reverse Transfer Capacitance
C
rss
30
pF
TurnOn Delay Time
t
d(on)
V
DD
= 300V
,
I
D
= 6.2A, R
G
= 9.1
,
32
ns
Rise Time
t
r
R
D
= 47
, Note 4
18
ns
TurnOff Delay Time
t
d(off)
55
ns
Fall Time
t
f
20
ns
Total Gate Charge
Q
g
V
GS
= 10V, I
D
= 6.2A, V
DS
= 360V
60
nC
GateSource Charge
Q
gs
8.3
nC
GateDrain ("Miller") Charge
Q
gd
30
nC
Internal Drain Inductance
L
D
Between lead, 6mm (.250 in) from package
4.5
nH
Internal Source Inductance
L
S
and center of die contact
7.5
nH
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
I
S
(Body Diode)
6.2
A
Pulse Source Current
I
SM
(Body Diode) Note 1
25
A
Diode Forward Voltage
V
SD
T
J
= +25
C, I
S
= 6.2A, V
GS
= 0V, Note 4
1.5
V
Reverse Recovery Time
t
rr
T
J
= +25
C, I
F
= 6.2A, di/dt = 100A/
s,
450
940
ns
Reverse Recovery Charge
Q
rr
Note 4
3.8
7.9
C
Forward TurnOn Time
t
on
Intrinsic turnon time is neglegible (turnon is dominated by L
S
+ L
D
)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
PDF 
ZIP