NTE2384
MOSFET
NChannel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
DrainSource Voltage, V
DS
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage (R
GS
= 20k
), V
DGR
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (T
C
= +25
C), I
DM
24A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Drain Current, I
D
T
C
= +30
C
6.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
3.9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Dissipation (T
C
= +25
C), P
tot
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
1.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoAmbient, R
thJA
35
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
DrainSource Breakdown Voltage
V
(BR)DSS
I
D
= 250
A, V
GS
= 0
800
V
ZeroGate Voltage Drain Current
I
DSS
V
GS
= 0, V
DS
= 800V, T
J
= +25
C
20
250
A
V
GS
= 0, V
DS
= 800V, T
J
= +125
C
0.1
1.0
mA
GateBody Leakage Current
I
GSS
V
DS
= 0, V
GS
=
20V
10
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA
2.1
3.0
4.0
V
Static DrainSource On Resistance
R
DS(on)
V
GS
= 10V, I
D
= 3A
1.3
1.5
Dynamic Characteristics
Forward Transconductance
g
fs
V
DS
= 25V, I
D
= 3A
1.8
3.0
mho
Input Capactiance
C
iss
V
DS
= 25V, V
GS
= 0, f = 1MHz
3900
5000
pf
Output Capacitance
C
oss
200
350
pf
Reverse Transfer Capactiance
C
rss
80
140
pf
TurnOn Time
t
d(on)
V
DD
= 30V, I
D
= 2.6A, V
GS
= 10V,
60
90
ns
Rise Time
t
r
R
GS
= 50
, R
gen
= 50
90
140
ns
TurnOff Delay Time
t
d(off)
330
430
ns
Fall Time
t
f
110
140
ns
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics (Cont'd)
Internal Drain Inductance
L
D
Measured from contact screw on
header closer to source pin and
center of die
5.0
nH
Internal Source Inductance
L
S
Measured from the source lead
6mm from package to source
bonding pad
12.5
nH
SourceDrain Diode Ratings and Characteristics
Continuous Reverse Drain Current
I
DR
T
C
= +25
C
6
A
Pulsed Reverse Drain Current
I
DRM
T
C
= +25
C
24
A
Diode Forward Voltage
V
SD
I
F
= 12A, V
GS
= 0, T
J
= +25
C
1.1
1.5
V
Reverse Recovery Time
t
rr
I
F
= 6A, T
J
= +25
C
1800
ns
Reverse Recovered Charge
Q
rr
V
GS
= 0, V
R
= 100V, T
J
= +25
C,
di
F
/dt = 100A/
s,
25
C
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Source
Drain/Case
Gate
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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